Efficient emission of InGaN-based light-emitting diodes: toward orange and red

Shengnan Zhang; Jianli Zhang; Jiangdong Gao; Xiaolan Wang; Changda Zheng; Meng Zhang; Xiaoming Wu; Longquan Xu; Jie Ding; Zhijue Quan; Fengyi Jiang

doi:doi:10.1364/PRJ.402555

Photonics Research, 2020, 8 (11): 11001671, Published Online: Oct. 10, 2020

Efficient emission of InGaN-based light-emitting diodes: toward orange and red Download： 922次

Shengnan Zhang Jianli Zhang ^*Jiangdong Gao Xiaolan Wang Changda Zheng Meng Zhang Xiaoming Wu Longquan Xu Jie Ding Zhijue Quan Fengyi Jiang

Author Affiliations

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

Figures & Tables

Fig. 1. Schematic epi-structures of InGaN-based orange LEDs on silicon(111) substrates: (a) Sample A with nine orange QWs and (b) Sample B with two orange QWs and seven yellow QWs. (c) TEM image of a cross section near the active region of Sample B. For easier presentation, the full thicknesses of n-GaN and p-GaN are not shown.

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Fig. 2. Room temperature electroluminescence spectra of (a) Sample A and (b) Sample B, where lines 1 to 9 correspond to a current density of 0.4, 0.8, 1.5, 2.0, 3.0, 4.0, 5.5, 7.5, and 10.0 A/cm2, respectively.

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Fig. 3. (a) Room temperature dependence of WPE on the current density of InGaN-based orange LEDs on silicon(111) substrates. Emission photos of (b) Sample B and (c) Sample A driven at a current density of 0.8 A/cm2.

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Fig. 4. Fluorescence luminescence images of InGaN-based orange LEDs on silicon(111) substrates, (a) Sample A and (b) Sample B, under an excited lamp source with a wavelength range from 510 to 560 nm.

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Fig. 5. Dependence of (a) WPE, (b) FWHM, and (c) voltage on the peak wavelength of InGaN-based orange and red LEDs at room temperature and at a current density of 0.8 A/cm2.

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Shengnan Zhang, Jianli Zhang, Jiangdong Gao, Xiaolan Wang, Changda Zheng, Meng Zhang, Xiaoming Wu, Longquan Xu, Jie Ding, Zhijue Quan, Fengyi Jiang. Efficient emission of InGaN-based light-emitting diodes: toward orange and red[J]. Photonics Research, 2020, 8(11): 11001671.

Efficient emission of InGaN-based light-emitting diodes: toward orange and red Download： 922次

Fig. 2. Room temperature electroluminescence spectra of (a) Sample A and (b) Sample B, where lines 1 to 9 correspond to a current density of 0.4, 0.8, 1.5, 2.0, 3.0, 4.0, 5.5, 7.5, and 10.0 A/cm2, respectively.

Fig. 3. (a) Room temperature dependence of WPE on the current density of InGaN-based orange LEDs on silicon(111) substrates. Emission photos of (b) Sample B and (c) Sample A driven at a current density of 0.8 A/cm2.

Fig. 4. Fluorescence luminescence images of InGaN-based orange LEDs on silicon(111) substrates, (a) Sample A and (b) Sample B, under an excited lamp source with a wavelength range from 510 to 560 nm.

Fig. 5. Dependence of (a) WPE, (b) FWHM, and (c) voltage on the peak wavelength of InGaN-based orange and red LEDs at room temperature and at a current density of 0.8 A/cm2.

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Efficient emission of InGaN-based light-emitting diodes: toward orange and red Download： 922次

Fig. 2. Room temperature electroluminescence spectra of (a) Sample A and (b) Sample B, where lines 1 to 9 correspond to a current density of 0.4, 0.8, 1.5, 2.0, 3.0, 4.0, 5.5, 7.5, and 10.0 A/cm2, respectively.

Fig. 3. (a) Room temperature dependence of WPE on the current density of InGaN-based orange LEDs on silicon(111) substrates. Emission photos of (b) Sample B and (c) Sample A driven at a current density of 0.8 A/cm2.

Fig. 4. Fluorescence luminescence images of InGaN-based orange LEDs on silicon(111) substrates, (a) Sample A and (b) Sample B, under an excited lamp source with a wavelength range from 510 to 560 nm.

Fig. 5. Dependence of (a) WPE, (b) FWHM, and (c) voltage on the peak wavelength of InGaN-based orange and red LEDs at room temperature and at a current density of 0.8 A/cm2.

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