基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

吴燕宇; 张晓松; 徐建萍; 牛喜平; 罗程远; 李美惠; 李萍; 石庆良; 李岚

doi:doi:10.3788/fgxb20123304.0428

发光学报, 2012, 33 (4): 428, 网络出版: 2012-04-16

基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer

论文大纲

吴燕宇 ^1,2,*张晓松 ²徐建萍 ²牛喜平 ²罗程远 ²李美惠 ^1,2李萍 ²石庆良 ²李岚 ²

作者单位

¹ 天津理工大学电子信息工程学院，天津 300384

² 天津理工大学材料物理研究所显示材料与光电器件教育部重点实验室，天津 300384

有机双稳态器件 ZnS量子点电荷传输机制聚乙烯基吡咯烷酮 OBD ZnS quantum dots charge-transport mechanism poly-4-vinyl-phenol

摘要

用ZnS量子点与poly-4-vinyl-phenol (PVP)复合，通过简单的旋涂法制备了结构为ITO/ZnS∶PVP/Al的一次写入多次读取(WORM)的有机双稳态器件。器件起始状态为OFF态，通过正向电压的作用，器件由OFF态转变为ON态，并且在正向或反向电压的作用下，器件始终保持在ON态，表现出良好的一次写入多次读取的存储特性。与不含ZnS量子点的器件相比，含有ZnS量子点的器件表现出明显的双稳态特性，其电流开关比达到104，这说明ZnS量子点在器件中起到存储介质的作用。通过对器件电流-电压(I-V)特性的测试，详细讨论了器件的双稳态特性以及载流子传输机制，并且用不同的传导理论模型分析了器件在ON态和OFF态的电流传导机制。器件I-t曲线表明器件在大气环境中具有良好的永久保持特性。

Abstract

A write-once-read-many-times (WORM) bistable device was prepared, in which ZnS quantum dots doped poly-4-vinyl-phenol (PVP) layer was sandwiched between ITO anode and Al cathode. Current-voltage (I-V) curves showed a switching characteristic with a large ON/OFF ratio of 104. The electrical bistability properties and charge-transport mechanisms were discussed in detail based on I-V characteristics. The conduction mechanisms in both ON- and OFF-states were discussed in terms of different theoretical models. The data-retention characteristics of the current-time (I-t) curve exhibited permanent retention ability at ambient conditions.

参考文献

[1] Lin Jian, Li Di, Chen Jiangshan, et al. Nonvolatile memory devices based on gold nanoparticle and poly (N-Vinylcarbazole) composite ［J］. Chin. Phys. Lett.(中国物理快报), 2007, 24(11):3280-3282 (in English).

[2] Chaure N B, Basova T, Ray A K, et al. Memory effects in thin film organic transistor characteristics ［J］. J. Phys. D, 2009, 42(12):125103-1-5.

[3] Lin C W, Wang D Y, Tai Y, et al. Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene) ［J］. J. Phys. D, 2011, 44(29):292002-1-5.

[4] Ribierre J C, Aoyama T, Muto T, et al. Hybrid organic-inorganic liquid bistable memory devices ［J］. Org. Electron., 2011, 12(11):1800-1805.

[5] Smith S, Forrest S R. A low switching voltage organic-on-inorganic heterojunction memory element utilizing a conductive polymer fuse on a doped silicon substrate ［J］. Appl. Phys. Lett., 2004, 84(24):5019-5021.

[6] Seo J, Kim W J, Kim S J, et al. Polymer nanocomposite photovoltaics utilizing CdSe nanocrystals capped with a thermally cleavable solubilizing ligand ［J］. Appl. Phys. Lett., 2009, 94(13):133301-1-3.

[7] Tang Aiwei, Teng Feng, Qian Lei, et al. Electrical bistability of copper (Ⅰ) sulfide nanocrystals blending with a semiconducting polymer ［J］. Appl. Phys. Lett., 2009, 95(14):143115-1-3.

[8] Son D I, Oh D H, Jung J H, et al. Charging and discharging mechanisms of organic bistable devices based on ZnO nanoparticles capped with a poly N-vinylcarbazole polymer ［J］. J. Nanosci. Nanotechno., 2011, 11(1):711-715.

[9] Son Dongick, Kim Jihwan, Park Donghee, et al. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer ［J］. Nanotechnology, 2008, 19(5):055204-1-5.

[10] Zhang Youlin, Zeng Qinghui, Kong Xianggui. The influence of bioconjugate process on the photoluminescence properties of water-soluble CdSe/ZnS core-shell quantum dots capped with polymer ［J］. Chin. J. Lumin.(发光学报), 2010, 31(1):101-104 (in Chinese).

[11] Xuan R W, Xu J P, Zhang X S, et al. Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots ［J］. Appl. Phys. Lett., 2011, 98(4):041907-1-3.

[12] He Ying, Pan Zhaodong, Zhang Yaofei, et al. Photo- and electro-luminescence of PANI/ZnO nanowire film for light-emitting layer of flexible optoelectronic devices ［J］. Chin.J. Lumin.(发光学报), 2012, 33(2):201-205 (in Chinese).

[13] Yin Yuehong, Deng Zhenbo, Lun Jianchao, et al. Organic electroluminescence of ZnSe/ZnS nanocrystal hybrid with MEH-PPV ［J］. Chin. J. Lumin.(发光学报), 2012, 33(2):171-175 (in Chinese).

[14] Kannan V, Chae Y, Ramana C H V V, et al. All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory ［J］. J. Appl. Phys., 2011, 109(8):086103-1-3.

[15] Son D I, You C H, Kim W T, et al. Electrical bistabilities and memory mechanisms of organic bistable devices based on colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites ［J］. Appl. Phys. Lett., 2009, 94(13):132103-1-3.

[16] Son D I, Park D H, Choi W K, et al. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly (methyl methacrylate) polymer layer ［J］. Nanotechnology, 2009, 20(19):195203-1-6.

[17] Son D I, Kim T W, Shim J H, et al. Flexible organic bistable devices based on graphene embedded in an insulating poly (methyl methacrylate) polymer layer ［J］. Nano lett., 2010, 10(7):2441-2447.

[18] Rath A K, Pal A J. Conductance switching in an organic material: From bulk to monolayer ［J］. Langmuir, 2007, 23(19):9831-9835.

吴燕宇, 张晓松, 徐建萍, 牛喜平, 罗程远, 李美惠, 李萍, 石庆良, 李岚. 基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制[J]. 发光学报, 2012, 33(4): 428. WU Yan-yu, ZHANG Xiao-song, XU Jian-ping, NIU Xi-ping, LUO Cheng-yuan, LI Mei-hui, LI Ping, SHI Qing-liang, LI Lan2. Memory Effect and Charge-transport Mechanisms of Write-once-read-many-times Bistable Devices Based on ZnS Quantum Dots Embedded in Poly-4-vinyl-phenol Layer[J]. Chinese Journal of Luminescence, 2012, 33(4): 428.

基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

关于本站 Cookie 的使用提示

全站搜索

基于ZnS量子点与聚合物混合层的有机双稳态器件的记忆特性及其载流子传输机制

相关论文

相关资讯

关于本站 Cookie 的使用提示

全站搜索