室温下利用阴极荧光光谱技术对ZnSe晶体进行了350~850 nm的无损全光阴极荧光图谱检测，分析了晶体内部缺陷及夹杂情况，室温下测得ZnSe晶体在400~550 nm的阴极荧光光谱，阴极荧光光谱测得462 nm处的ZnSe本征发光峰。缺陷处测得462 nm的本征发光峰和453 nm的缺陷发光峰，结合能谱分析，ZnSe晶体表面缺陷处的Zn：Se比约为6：4。阴极荧光图谱中缺陷处发光峰主要来自Zn夹杂缺陷发光。

As-received ZnSe crystal has been examined by cathodoluminescence spectroscopy ranging from 350nm to 850nm at room temperature for internal defects and inclusions. Two cathodoluminescence peaks of 462nm and 453nm were detected，of which the former was identified as intrinsic cathodoluminescence of ZnSe and the latter was caused by the crystal defect. The Zn：Se ratio of 6：4 was found by energy dispersive x-ray spectroscopy（EDS），and the extrinsic cathodoluminescence peak of 453nm was attributed to additional Zn in excess of ZnSe stoichiometry.