中国激光, 1990, 17 (7): 416, 网络出版: 2007-11-12
金属薄片上无定形硅(SOM)的激光再结晶研究
A study of laser recrystallization of SOM (Silicon On Metal) material
摘要
以CW Ar+激光对非晶硅再结晶得到了SOM(Silicon on Metal)多晶硅新材料。其晶粒大小为10×40 μm2,杂质分布均匀,电学性能大大改善.用这种SOM材料已制备成功在1bar压力范围内灵敏度为6mV/V的性能良好的压力传感器。
Abstract
CW Ar+ laser irradiation was used to recrystallize a-Si film, and the grain was increased to more than 10×40μm2, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly. The pressure transducer made of this material has a pressure sensitivity of 6 mV/V at the pressure range of 1 bar.
参考文献
林成鲁, 邢昆山, 陈莉芝, 许学敏, 谭松生, 邹世昌. 金属薄片上无定形硅(SOM)的激光再结晶研究[J]. 中国激光, 1990, 17(7): 416. 林成鲁, 邢昆山, 陈莉芝, 许学敏, 谭松生, 邹世昌. A study of laser recrystallization of SOM (Silicon On Metal) material[J]. Chinese Journal of Lasers, 1990, 17(7): 416.
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