Eu掺杂SiCxOy薄膜的Eu<sup>3+</sup>发光机制

利用磁控溅射技术在低温250 ℃下制备Eu掺杂SiCxOy薄膜, 研究薄膜的Eu3+发光激发机制。实验结果表明, 薄膜的发光谱由来自基体材料的蓝光和来自Eu3+的红光组成; 随着薄膜中Eu含量由0.19%增加到2.27%, 其红光强度增加3倍左右, 而蓝光逐渐减弱。Raman光谱及荧光瞬态谱分析表明, 其蓝光由中立氧空位缺陷发光中心引起。结合薄膜的Eu3+激发光谱分析, SiCxOy∶Eu薄膜的红光增强源于薄膜中Eu3+离子浓度的增加和/或基体材料的中立氧空位缺陷发光中心与Eu3+离子的能量转移。

Abstract

Eu doped silicon oxycarbide (SiCxOy∶Eu) films were fabricated by magnetron sputtering at a low temperature of 250 ℃. The excitation mechanism of Eu3+ photoluminescence (PL) from SiCxOy∶Eu was investigated. The spectra of all the SiCxOy∶Eu films contain two PL bands: the blue band originated from the host matrix and Eu3+ red PL band. With the increasing of the content of Eu from 0.19% to 2.27%, the red PL intensity is enhanced more than three times, while the blue PL intensity gradually decreases. The analysis results of Rama spectra and time-resolved PL show that the blue PL mainly originates from neutral oxygen vacancy (NOV) defect centers in the SiCxOy matrix. Combining with the PLE results, the enhanced red light emission is suggested from the increased concentration of Eu3+ ions and/or the energy transfer between the NOV defect centers and optically active Eu3+ ions.

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王岩, 林圳旭, 宋捷, 张文星, 王怀佩, 郭艳青, 李洪亮, 宋超, 黄锐. Eu掺杂SiCxOy薄膜的Eu³⁺发光机制[J]. 发光学报, 2017, 38(8): 1010. WANG Yan, LIN Zhen-xu, SONG Jie, ZHANG Wen-xing, WANG Huai-pei, GUO Yan-qing, LI Hong-liang, SONG Chao, HUANG Rui. Excitation Mechanism of Eu³⁺ Photoluminescence from Eu Doped Silicon Oxycarbide Film[J]. Chinese Journal of Luminescence, 2017, 38(8): 1010.

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