量子电子学报, 2017, 34 (1): 117, 网络出版: 2017-02-09
外场对InPBi量子阱中激子结合能的影响
Effect of external field on exciton binding energy in InPBi quantum well
引用该论文
陈丽, 王海龙, 陈莎, 李正, 李士玲, 龚谦. 外场对InPBi量子阱中激子结合能的影响[J]. 量子电子学报, 2017, 34(1): 117.
CHEN Li, WANG Hailong, CHEN Sha, LI Zheng, LI Shiling, GONG Qian. Effect of external field on exciton binding energy in InPBi quantum well[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 117.
陈丽, 王海龙, 陈莎, 李正, 李士玲, 龚谦. 外场对InPBi量子阱中激子结合能的影响[J]. 量子电子学报, 2017, 34(1): 117. CHEN Li, WANG Hailong, CHEN Sha, LI Zheng, LI Shiling, GONG Qian. Effect of external field on exciton binding energy in InPBi quantum well[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 117.
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