量子电子学报, 2017, 34 (1): 117, 网络出版: 2017-02-09
外场对InPBi量子阱中激子结合能的影响
Effect of external field on exciton binding energy in InPBi quantum well
基本信息
| DOI: | 10.3969/j.issn.1007-5461. 2017.01.019 |
| 中图分类号: | O471.1 |
| 栏目: | 半导体光电 |
| 项目基金: | Supported by National Natural Science Foundation of China(国家自然科学基金,61205055), Natural Science Foundation of Shandong Province(山东省自然科学基金, ZR2014FM011), Open Project of State Key Laboratory of Functional Materials for Informatics(信息功能材料国家重点实验开放课题, SKL201307) |
| 收稿日期: | 2016-01-05 |
| 修改稿日期: | 2016-01-29 |
| 网络出版日期: | 2017-02-09 |
| 通讯作者: | 陈丽 (chenlijbm@163.com) |
| 备注: | -- |
陈丽, 王海龙, 陈莎, 李正, 李士玲, 龚谦. 外场对InPBi量子阱中激子结合能的影响[J]. 量子电子学报, 2017, 34(1): 117. CHEN Li, WANG Hailong, CHEN Sha, LI Zheng, LI Shiling, GONG Qian. Effect of external field on exciton binding energy in InPBi quantum well[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 117.
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