外场对InPBi量子阱中激子结合能的影响

陈丽; 王海龙; 陈莎; 李正; 李士玲; 龚谦

doi:doi:10.3969/j.issn.1007-5461. 2017.01.019

量子电子学报, 2017, 34 (1): 117, 网络出版: 2017-02-09

外场对InPBi量子阱中激子结合能的影响

Effect of external field on exciton binding energy in InPBi quantum well

论文大纲

陈丽 ^1,*王海龙 ¹陈莎 ¹李正 ¹李士玲 ¹龚谦 ²

作者单位

¹ 曲阜师范大学物理工程学院, 山东曲阜 273165

² 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050

摘要

在有效质量近似下运用变分法计算了InAlAs/InPBi/InAlAs量子阱中的激子结合能随阱宽、 Al组分、Bi组分的变化情况,分析了外加电场和磁场对激子结合能的影响。结果表明:激子结合能随阱宽增大呈现先增大后减小的趋势;随Al、Bi组分的增大,激子结合能也逐渐增大;外加电场较小时对激子结合能的影响很小,外加电场较大时破坏了激子效应;激子结合能随外加磁场增大呈现单调增大的趋势。计算结果对InAlAs/InPBi/InAlAs量子阱在光电子器件方面的应用有一定指导意义。

Abstract

Changes of exciton binding energies in InAlAs/InPBi/InAlAs quantum well with the well width, Al and Bi components are calculated using the variational method in the effective mass approximation. The effects of the applied electric field and magnetic field on exciton binding energy are analyzed. Results show that exciton binding energy increases firstly and then decreases with the increasing of well width. With the increasing of Al and Bi components, the exciton binding energy also increases gradually. Effect of the applied electric field which is smaller on the exciton binding energy is small. When the applied electric field is large enough, it will destroy the exciton effect. Exciton binding energy presents monotonous increasing tendency with the increasing of the applied magnetic field. The calculation results have certain guiding significance for applications of InAlAs/InPBi/InAlAs quantum well in optoelectronic devices.

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陈丽, 王海龙, 陈莎, 李正, 李士玲, 龚谦. 外场对InPBi量子阱中激子结合能的影响[J]. 量子电子学报, 2017, 34(1): 117. CHEN Li, WANG Hailong, CHEN Sha, LI Zheng, LI Shiling, GONG Qian. Effect of external field on exciton binding energy in InPBi quantum well[J]. Chinese Journal of Quantum Electronics, 2017, 34(1): 117.

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