作者单位
摘要
1 宁波大学材料科学与化学工程学院, 宁波 315211
2 浙江省光电探测及器件重点实验室, 宁波 315211
CsPbX3(X=Cl-, Br-, I-)钙钛矿单晶具有优异的光电性能, 有望成为下一代光电探测材料。由于CsCl在前驱体中的溶解度过小, 通过低温溶液法较难生长得到CsPbCl3晶体。本工作采用坩埚下降法成功生长了1英寸完整的CsPbCl3晶体, 并对晶体进行了一系列加工, 得到了φ10 mm×10 mm和厚度为2 mm的单晶片。测试了晶体的X射线粉末衍射图谱、TG/DTA曲线、X射线激发发射光谱、透过光谱和低温荧光光谱。在X射线的激发下, 在430和575 nm观察到两个X射线激发发射峰, 晶体的透过率达到75%;光致发光(PL)强度与温度依赖性曲线中可以观察到热猝灭现象, 计算得到晶体4个峰的激子结合能分别为12.59、8.21、12.41和21.59 meV。
钙钛矿单晶 CsPbCl3晶体 坩埚下降法 光学带隙 低温荧光光谱 激子结合能 perovskite single crystal CsPbCl3 crystal Bridgman method optical band gap low temperature fluorescence spectroscopy exciton binding energy 
人工晶体学报
2023, 52(4): 578
Author Affiliations
Abstract
1 Beijing Academy of Quantum Information Sciences, Beijing, China
2 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
3 School of Materials Science and Engineering, Peking University, Beijing, China
4 Research Center for Wide Gap Semiconductor, Peking University, Beijing, China
5 Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Laboratory of Information Photonic Technique, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China
6 Department of Physics, College of Physical Science and Technology, Xiamen University, Xiamen, China
7 CNR NANOTEC, Campus Ecotekne, Lecce, Italy
8 State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China
9 Frontier Science Center for Quantum Information, Beijing, China
10 Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China
The quest for realizing novel fundamental physical effects and practical applications in ambient conditions has led to tremendous interest in microcavity exciton polaritons working in the strong coupling regime at room temperature. In the past few decades, a wide range of novel semiconductor systems supporting robust exciton polaritons have emerged, which has led to the realization of various fascinating phenomena and practical applications. This paper aims to review recent theoretical and experimental developments of exciton polaritons operating at room temperature, and includes a comprehensive theoretical background, descriptions of intriguing phenomena observed in various physical systems, as well as accounts of optoelectronic applications. Specifically, an in-depth review of physical systems achieving room temperature exciton polaritons will be presented, including the early development of ZnO and GaN microcavities and other emerging systems such as organics, halide perovskite semiconductors, carbon nanotubes, and transition metal dichalcogenides. Finally, a perspective of outlooking future developments will be elaborated.
microcavity exciton polariton Bose–Einstein condensation exciton binding energy quantum simulation nonequilibrium dynamics 
Photonics Insights
2022, 1(1): R04
陈丽 1,*王海龙 1陈莎 1李正 1[ ... ]龚谦 2
作者单位
摘要
1 曲阜师范大学物理工程学院, 山东 曲阜 273165
2 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室, 上海 200050
在有效质量近似下运用变分法计算了InAlAs/InPBi/InAlAs量子阱中的激子结合能随阱宽、 Al组分、Bi组分的变化情况,分析了外加电场和磁场对激子结合能的影响。结果表明:激子结合 能随阱宽增大呈现先增大后减小的趋势;随Al、Bi组分的增大,激子结合能也逐渐增大;外加电场 较小时对激子结合能的影响很小,外加电场较大时破坏了激子效应;激子结合能随外加磁场增大呈 现单调增大的趋势。计算结果对InAlAs/InPBi/InAlAs量子阱在光电子器件方面的应用有一定指导意义。
光电子学 激子结合能 变分法 InAlAs/InPBi/InAlAs量子阱 电场 磁场 optoelectronics exciton binding energy variational method InAlAs/InPBi/InAlAs quantum well electric field magnetic field 
量子电子学报
2017, 34(1): 117
作者单位
摘要
河南师范大学 物理与信息工程学院,河南 新乡 453007
在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应和内建电场,研究了ZnO/MgxZn1-xO耦合量子点中激子结合能、带间光跃迁能以及电子-空穴复合率随量子点结构参数(量子点高度和势垒层厚度)的变化。结果表明:激子结合能、带间光跃迁能和电子-空穴复合率随量子点高度或势垒层厚度的增加而降低。
量子点 激子结合能 带间光跃迁能 电子-空穴复合率 coupled quantum dots exciton binding energy transition energy recombination rate 
液晶与显示
2009, 24(3): 340

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