[1] HOWARD L, PETER B, WILLIAM C, et al.. Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing ［J］. Thin Solid Films, 1992, 220(1): 1-7.

[2] 许雪峰, 马冰迅, 黄亦申, 等. 利用复合磨粒抛光液的硅片化学机械抛光［J］. 光学 精密工程, 2009, 17(7): 1587-1593.

    XU X F, MA B X, HUANG Y S, et al.. Error analysing and approaches of improving measuring precision in image measuring system ［J］. Opt. Precision Eng., 2009, 17(7): 1587-1593. (in Chinese)

[3] 白林山, 熊伟, 储向峰, 等. SiO2/CeO2复合磨粒的制备及在蓝宝石晶片抛光中的应用［J］. 光学 精密工程, 2014, 22(5): 1289-1295.

    BAI L SH, XIONG W, CHU X F, et al.. Preparation of nano SiO2/CeO2 composite particles and their applications to CMP on sapphire substrates ［J］. Opt. Precision Eng., 2014, 22(5): 1289-1295. (in Chinese)

[4] 刘德福, 陈涛, 陈广林, 等. 软性粒子抛光石英玻璃的材料去除机理［J］. 光学 精密工程, 2016, 24(7): 1623-1631.

    LIU D F, CHEN T, CHEN G L, et al.. Material removal mechanism for fused glass by using soft particles ［J］. Opt. Precision Eng., 2016, 24(7): 1623-1630. (in Chinese)

[5] ZHANG B C, LEI H, CHEN Y. Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire ［J］. Friction, 2017, 9: 1-8.

[6] XU Q Z, FANG J J, CHEN L. A chip-scale chemical mechanical planarization model for copper interconnect structures ［J］. Microelectronic Engineering, 2016, 149(C): 14-24.

[7] 居志兰, 朱永伟, 王建彬, 等. 抛光介质对固结磨料化学机械抛光水晶的影响［J］. 光学 精密工程, 2013, 21(4): 955-962.

    JU ZH L, ZHU Y W, WANG J B, et al.. Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity ［J］. Opt. Precision Eng., 2013, 21(4): 955-962 (in Chinese)

[8] 周艳, 潘国顺, 史晓磊, 等. LED蓝宝石衬底抛光表面原子台阶形貌及其周期性研究［J］. 光学 精密工程, 2017, 25 (1): 100-106.

    ZHOU Y, PAN G SH, SHI X L, et al.. Atomic step morphology research of LED sapphire substrate polishing surface and its periodicity ［J］. Opt. Precision Eng., 2017, 25(1):100-106. (in Chinese)

[9] 吕玉山, 王军, 张辽远, 等. 护环对硅片抛光表面压强分布和轮廓的影响［J］. 光学 精密工程, 2008, 16(4): 689-695.

    LU Y SH, WANG J, ZHANG L Y, et al.. Effect of retaining ring on pressure distribution and profile of polishing wafer surface ［J］. Opt. Precision Eng., 2008, 16(4): 689-695. (in Chinese)

[10] ZEIDLER D, TNER M, DRESCHER K. Endpoint detection method for CMP of copper ［J］. Microelectronic Engineering, 2000, 50(1): 411-416.

[11] ALLEN R, CHEN C, TRIKAS T, et al.. In-situ CMP copper endpoint control system ［C］. IEEE International Symposium on Semiconductor Manufacturing, San Jose, America: ISSM, 2001: 121-135.

[12] BIBBY T, HOLLAND K. Endpoint detection for CMP ［J］. Journal of Electronic Materials, 1998, 27(10): 1073-1081.

[13] HE A D, LIU B, SONG Z T, et al.. Endpoint detection of Ge2Sb2Te5 during chemical mechanical planarization ［J］. Applied Surface Science, 2013, 283(14): 304-308.

[14] ZAKOUR S B, TALEB H. Using discrete wavelet analysis and sequential test to detect the endpoint in CMP process ［J］. International Journal of Computer Applications, 2013, 42(13): 33-40.

[15] ZENG Y B, ZHANG J, ZHOU H, et al.. A new processing technique for fabrication of ultra-thin wafer ［J］. The International Journal of Advanced Manufacturing Technology, 2018, 1-12.

[16] PLβL A, KRUTER G. Wafer direct bonding: tailoring adhesion between brittle materials ［J］. Materials Science & Engineering R Reports, 1999, 25(1-2): 1-88.

[17] 曾毅波, 刘畅, 陈观生, 等. 运用研磨和化学机械抛光技术制备高品质的石英薄膜［J］. 传感技术学报, 2013, 26 (1): 1-6.

    ZENG Y B, LIU C, CHENG G S, et al.. High-Quality quartz thin film prepared by lapping and chemical ＆ mechanical polishing technology ［J］. Chinese Journal of Sensors And Actuators, 2015, 13(3):179-185. (in Chinese).

[18] KIM N H, KO P J, KANG S K, et al.. Platinum chemical mechanical polishing (CMP) characteristics for high density ferroelectric memory applications ［J］. Microelectronic Engineering, 2007, 84 (11): 2702-2706.

[19] EIN-ELI Y, ABELEV E, STAROSVETSKY D. Electrochemical aspects of copper chemical mechanical planarization (CMP) in peroxide based slurries containing BTA and glycine ［J］. Electrochimica Acta, 2004, 49(9): 1499-1503.

[20] LEE H S, LEE D S, JEONG H D. Mechanical aspects of the chemical mechanical polishing process: A review ［J］. International Journal of Precision Engineering and Manufacturing, 2016, 17 (4): 525-536.

[21] SRINIVASAN R, DANDU P V R, BABUB S V. Shallow Trench Isolation Chemical Mechanical Planarization: A Review ［J］. Journal of Solid State Science and Technology, 2015, 4(11): 5029-5039.

[22] YANG J C, PENIGALAPATIL D, CHAO T F, et al.. Challenges in Chemical Mechanical Planarization defects of 7nm device and its improvement opportunities ［C］. China Semiconductor Technology International Conferenceg, Shanghai, China: CSTIC, 2017: 1-3.

[23] 乔辉, 陈心恬, 赵水平, 等. 化学机械抛光产生的碲镉汞材料亚表面损伤层的研究［J］. 红外与激光工程, 2016, 45(12): 1-5.

    QIAO H, CHEN X T, ZHAO S P, et al.. Study of the sub-surface damage of HgCdTe induced by chemical-mechanical polishing method ［J］. Infrared and Laser Engineering, 2016, 45 (12): 1-5. (in Chinese)

[24] 高绮. 纳米聚集氧化硅固定磨料抛光布的抛光特性［J］. 光学 精密工程, 2016, 24(10): 2490-2497.

    GAO Q. Polishing characteristics of fixed-abrasive pad by using nano-aggregate silica ［J］. Opt. Precision Eng., 2016, 24(10): 2490-2497. (in Chinese)