半导体光电, 2015, 36 (1): 20, 网络出版: 2015-06-25  

ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究

Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector
作者单位
1 中国科学院上海技术物理研究所 传感技术国家重点实验室, 上海 200083
2 中国科学院大学, 北京 100039
引用该论文

刘秀娟, 张燕, 李向阳. ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究[J]. 半导体光电, 2015, 36(1): 20.

LIU Xiujuan, ZHANG Yan, LI Xiangyang. Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2015, 36(1): 20.

参考文献

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刘秀娟, 张燕, 李向阳. ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究[J]. 半导体光电, 2015, 36(1): 20. LIU Xiujuan, ZHANG Yan, LI Xiangyang. Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2015, 36(1): 20.

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