ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究
[1] Sze M.VLSI Technology[M]. New York: McGraw-Hill, 1988.
[2] Liu X F,Zhang L, Liu Y. Microstructure and the dielectric properties of SiCN-Si3N4 ceramics fabricated via LPCVD/CVI[J]. Ceramics International, 2014, 40 (3): 5097-5102.
[3] Mohammed S,Nimmo M T, Malko A V. Chemical bonding and defect states of LPCVD grown silicon-rich Si3N4 for quantum dot applications[J]. J. Vacuum Science and Technol. A, 2014, 32 (2): 021507.
[4] Gatabi I R,Johnson D W, Woo J H, et al. PECVD silicon nitride passivation of AlGaN/GaN heterosructures[J]. IEEE Trans. on Electron Devices, 2013, 60 (3): 1082-1087.
[5] Wang C,Cho S J, Kim N Y, et al. Comparison of SiO2-based double passivation scheme by e-beam evaporation and PECVD for surface passivation and gate oxide in AlGaN/GaN HEMTs[J]. Microelectronic Engineering, 2013, 109: 24-27.
[6] Matsuoka M,Isotani S, Sucasaire W, et al. Chemical bonding and composition of silicon nitreide films prepared by inductively coupled plasma chemical vapor deposition[J]. Surface and Coatings Technol., 2010, 204 (18/19): 2923-2927.
[7] Hiramatsu T,Takahiro T, Furuta H, et al. Effect of pulsed substrate bias on film properties of SiO2 deposited by inductively coupled plasma chemical vapor deposition[J]. Jap. J. of Appl. Phys., 2010, 49 (3): SI.
[8] Dao V A,Nguyen V D, Heo J, et al. Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation[J]. Vacuum, 2009, 84 (3): 410-414.
[9] 施敏,伍国珏. 半导体器件物理[M]. 西安: 西安交通大学出版社, 2006.
[10] Sun L,Chen J, Li J, et al. AlGaN solar-blind avalanche photodiodes with high multiplication gain[J]. Appl. Phys. Lett., 2010, 97 (19): 191103-191107.
[11] Hashizume T,Ootomo S, Inagaki T, et al. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors[J]. J. Vacuum Science and Technol. B, 2003, 21 (4): 1828-1838.
[12] Lee M L,Yeh Y H, TU S J. Solar-blind p-i-n photodetectors formed on SiO2-patterned n-GaN templates[J]. IEEE J. Quantum Electron., 2012, 48 (10): 1305-1309.
刘秀娟, 张燕, 李向阳. ICPCVD-SiNx对GaN/AlGaN基紫外探测器的钝化效果的研究[J]. 半导体光电, 2015, 36(1): 20. LIU Xiujuan, ZHANG Yan, LI Xiangyang. Study on the ICPCVD-SiNx Passivation of InGaN Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2015, 36(1): 20.
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