[1] Lester L F, Hwang K C, Ho P, et al. Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs[J]. IEEE Photonics Technology Letters, 1993, 5(5): 511-514.
Lester L F, Hwang K C, Ho P, et al. Ultrafast long-wavelength photodetectors fabricated on low-temperature InGaAs on GaAs[J]. IEEE Photonics Technology Letters, 1993, 5(5): 511-514.
[2] Gupta S, Whitaker J F, Mourou G A. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures[J]. IEEE Journal of Quantum Electronics, 1992, 28(10): 2464-2472.
Gupta S, Whitaker J F, Mourou G A. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures[J]. IEEE Journal of Quantum Electronics, 1992, 28(10): 2464-2472.
[3] Wu J, Walukiewicz W, Yu K M, et al. Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system[J]. Journal of Applied Physics, 2003, 94(10): 6477-6482.
Wu J, Walukiewicz W, Yu K M, et al. Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system[J]. Journal of Applied Physics, 2003, 94(10): 6477-6482.
[4] Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors[J]. Physical Review Letters, 1992, 68(17): 2664-2667.
Ohno H, Munekata H, Penney T, et al. Magnetotransport properties of p-type (In, Mn)As diluted magnetic III-V semiconductors[J]. Physical Review Letters, 1992, 68(17): 2664-2667.
[5] Heimbuch M E, Holmes A L, Reaves C M, et al. Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers[J]. Journal of Electronic Materials, 1994, 23(2): 87-91.
Heimbuch M E, Holmes A L, Reaves C M, et al. Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers[J]. Journal of Electronic Materials, 1994, 23(2): 87-91.
[6] 夏宁, 方铉, 容天宇, 等. 表面硫钝化对GaAs材料光响应特性的影响[J]. 中国激光, 2018, 45(6): 0603002.
夏宁, 方铉, 容天宇, 等. 表面硫钝化对GaAs材料光响应特性的影响[J]. 中国激光, 2018, 45(6): 0603002.
Xia N, Fang X, Rong T Y, et al. Effect of surface sulfur passivation on photoresponse characteristics of GaAs materials[J]. Chinese Journal of Lasers, 2018, 45(6): 0603002.
Xia N, Fang X, Rong T Y, et al. Effect of surface sulfur passivation on photoresponse characteristics of GaAs materials[J]. Chinese Journal of Lasers, 2018, 45(6): 0603002.
[7] Ponomarev D S, Khabibullin R A, Yachmenev A E, et al. Intensive terahertz radiation from InxGa1-xAs due to photo-dember effect[J]. International Journal of High Speed Electronics and Systems, 2016, 25(3): 1640023.
Ponomarev D S, Khabibullin R A, Yachmenev A E, et al. Intensive terahertz radiation from InxGa1-xAs due to photo-dember effect[J]. International Journal of High Speed Electronics and Systems, 2016, 25(3): 1640023.
[8] Lee H J, Jang I K, An W C, et al. Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier[J]. Current Applied Physics, 2017, 17(12): 1582-1588.
Lee H J, Jang I K, An W C, et al. Enhanced output power of InGaAs/GaAs infrared light-emitting diode with GaxIn1-xP tensile strain barrier[J]. Current Applied Physics, 2017, 17(12): 1582-1588.
[9] Kim D K, Lee H J, An W C, et al. Dependence of laminar flow fluctuation on indium composition in In0.07GaAs/GaAs quantum wells for 940-nm infrared light-emitting diodes[J]. Journal of the Korean Physical Society, 2018, 72(9): 1020-1024.
Kim D K, Lee H J, An W C, et al. Dependence of laminar flow fluctuation on indium composition in In0.07GaAs/GaAs quantum wells for 940-nm infrared light-emitting diodes[J]. Journal of the Korean Physical Society, 2018, 72(9): 1020-1024.
[10] 罗子江, 倪照风, 丁召, 等. InxGa1-xAs/GaAs异质薄膜的临界厚度[J]. 功能材料, 2018, 49(8): 8166-8171.
罗子江, 倪照风, 丁召, 等. InxGa1-xAs/GaAs异质薄膜的临界厚度[J]. 功能材料, 2018, 49(8): 8166-8171.
Luo Z J, Ni Z F, Ding Z, et al. The critical thickness of InxGa1-xAs/GaAs heterofilms[J]. Journal of Functional Materials, 2018, 49(8): 8166-8171.
Luo Z J, Ni Z F, Ding Z, et al. The critical thickness of InxGa1-xAs/GaAs heterofilms[J]. Journal of Functional Materials, 2018, 49(8): 8166-8171.
[11] 罗子江, 周勋, 贺业全, 等. RHEED实时监控下MBE生长不同In组分的InGaAs薄膜[J]. 功能材料, 2011, 42(11): 2107-2111.
罗子江, 周勋, 贺业全, 等. RHEED实时监控下MBE生长不同In组分的InGaAs薄膜[J]. 功能材料, 2011, 42(11): 2107-2111.
Luo Z J, Zhou X, He Y Q, et al. The MBE growth research on different composition of In of InGaAs films under the real-time monitoring of RHEED[J]. Journal of Functional Materials, 2011, 42(11): 2107-2111.
Luo Z J, Zhou X, He Y Q, et al. The MBE growth research on different composition of In of InGaAs films under the real-time monitoring of RHEED[J]. Journal of Functional Materials, 2011, 42(11): 2107-2111.
[12] 郭祥, 王一, 魏文喆, 等. 不同应力下的InxGa1-xAs薄膜表面形貌[J]. 材料导报, 2015, 29(2): 21-23,37.
郭祥, 王一, 魏文喆, 等. 不同应力下的InxGa1-xAs薄膜表面形貌[J]. 材料导报, 2015, 29(2): 21-23,37.
Guo X, Wang Y, Wei W Z, et al. Study on the surface morphology of InxGa1-xAs film subjected to varying stresses[J]. Materials Review, 2015, 29(2): 21-23, 37.
Guo X, Wang Y, Wei W Z, et al. Study on the surface morphology of InxGa1-xAs film subjected to varying stresses[J]. Materials Review, 2015, 29(2): 21-23, 37.
[13] 刘宝林, 杨树人, 陈伯军, 等. LP: MOCVD研制InGaAs/InP应变量子阱LD[J]. 光子学报, 1996, 25(5): 434-438.
刘宝林, 杨树人, 陈伯军, 等. LP: MOCVD研制InGaAs/InP应变量子阱LD[J]. 光子学报, 1996, 25(5): 434-438.
Liu B L, Yang S R, Chen B J, et al. InGaAs/InP strained quantum well LD by LP-MOCVD[J]. Acta Photonica Sinica, 1996, 25(5): 434-438.
Liu B L, Yang S R, Chen B J, et al. InGaAs/InP strained quantum well LD by LP-MOCVD[J]. Acta Photonica Sinica, 1996, 25(5): 434-438.
[14] 刘洋, 李林, 乔忠良, 等. MOCVD生长1.06 μm波段InGaAs/GaAs单量子阱材料的发光特性研究[J]. 中国激光, 2014, 41(11): 1106001.
刘洋, 李林, 乔忠良, 等. MOCVD生长1.06 μm波段InGaAs/GaAs单量子阱材料的发光特性研究[J]. 中国激光, 2014, 41(11): 1106001.
Liu Y, Li L, Qiao Z L, et al. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD[J]. Chinese Journal of Lasers, 2014, 41(11): 1106001.
Liu Y, Li L, Qiao Z L, et al. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD[J]. Chinese Journal of Lasers, 2014, 41(11): 1106001.
[15] 朱龙德, 李晶, 陈德勇, 等. InGaAs/InP体材料和量子阱、超晶格材料的低压MOCVD生长及材料特性的测试分析[J]. 半导体学报, 1993, 14(4): 208-216.
朱龙德, 李晶, 陈德勇, 等. InGaAs/InP体材料和量子阱、超晶格材料的低压MOCVD生长及材料特性的测试分析[J]. 半导体学报, 1993, 14(4): 208-216.
Zhu L D, Li J, Chen D Y, et al. Low pressure MOCVD growth and characterization of InGaAs/InP bulk materials, quantum wells and superlattices[J]. Chinese Journal of Semiconductors, 1993, 14(4): 208-216.
Zhu L D, Li J, Chen D Y, et al. Low pressure MOCVD growth and characterization of InGaAs/InP bulk materials, quantum wells and superlattices[J]. Chinese Journal of Semiconductors, 1993, 14(4): 208-216.
[16] 王喜莲, 李浴春, 韩爱珍, 等. 用电共沉积方法制备InGaAs薄膜[J]. 材料研究学报, 2001, 15(4): 451-454.
王喜莲, 李浴春, 韩爱珍, 等. 用电共沉积方法制备InGaAs薄膜[J]. 材料研究学报, 2001, 15(4): 451-454.
Wang X L, Li Y C, Han A Z, et al. Preparation and performance of InGaAs thin film by electrodeposit[J]. Chinese Journal of Material Research, 2001, 15(4): 451-454.
Wang X L, Li Y C, Han A Z, et al. Preparation and performance of InGaAs thin film by electrodeposit[J]. Chinese Journal of Material Research, 2001, 15(4): 451-454.
[17] 罗子江, 周勋, 杨再荣, 等. InGaAs/GaAs异质薄膜的MBE生长研究[J]. 功能材料, 2011, 42(5): 846-849.
罗子江, 周勋, 杨再荣, 等. InGaAs/GaAs异质薄膜的MBE生长研究[J]. 功能材料, 2011, 42(5): 846-849.
Luo Z J, Zhou X, Yang Z R, et al. The MBE growth research on InGaAs/GaAs heterofilms[J]. Journal of Functional Materials, 2011, 42(5): 846-849.
Luo Z J, Zhou X, Yang Z R, et al. The MBE growth research on InGaAs/GaAs heterofilms[J]. Journal of Functional Materials, 2011, 42(5): 846-849.
[18] Vurgaftman I, Meyer J R. Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys[J]. Journal of Applied Physics, 2001, 89(11): 5815-5875.
Vurgaftman I, Meyer J R. Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys[J]. Journal of Applied Physics, 2001, 89(11): 5815-5875.
[19] Deki R, Sasaki T, Takahasi M. Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)[J]. Journal of Crystal Growth, 2017, 468: 241-244.
Deki R, Sasaki T, Takahasi M. Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)[J]. Journal of Crystal Growth, 2017, 468: 241-244.
[20] Arent D J. Deneffe K,van Hoof C, et al. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures[J]. Journal of Applied Physics, 1989, 66(4): 1739-1747.
Arent D J. Deneffe K,van Hoof C, et al. Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures[J]. Journal of Applied Physics, 1989, 66(4): 1739-1747.
[21] Nahory R E, Pollack M A. Johnston W D Jr, et al. Band gap versus composition and demonstration of Vegard's law for In1-xGaxAsyP1-y lattice matched to InP[J]. Applied Physics Letters, 1978, 33(7): 659-661.
Nahory R E, Pollack M A. Johnston W D Jr, et al. Band gap versus composition and demonstration of Vegard's law for In1-xGaxAsyP1-y lattice matched to InP[J]. Applied Physics Letters, 1978, 33(7): 659-661.
[22] Sugiyama Y, Inata T, Fujii T, et al. Conduction band edge discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≤x≤1) heterostructures[J]. Japanese Journal of Applied Physics, 1986, 25(8): L648-L650.
Sugiyama Y, Inata T, Fujii T, et al. Conduction band edge discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≤x≤1) heterostructures[J]. Japanese Journal of Applied Physics, 1986, 25(8): L648-L650.
[23] Brodsky M H, Lucovsky G. Infrared reflection spectra of Ga1-xInxAs: a new type of mixed-crystal behavior[J]. Physical Review Letters, 1968, 21(14): 990-993.
Brodsky M H, Lucovsky G. Infrared reflection spectra of Ga1-xInxAs: a new type of mixed-crystal behavior[J]. Physical Review Letters, 1968, 21(14): 990-993.
[24] Pearsall T P, Carles R, Portal J C. Single longitudinal-mode optical phonon scattering in Ga0.47In0.53As[J]. Applied Physics Letters, 1983, 42(5): 436-438.
Pearsall T P, Carles R, Portal J C. Single longitudinal-mode optical phonon scattering in Ga0.47In0.53As[J]. Applied Physics Letters, 1983, 42(5): 436-438.
[25] Emura S, Gonda S I, Matsui Y, et al. Internal-stress effects on Raman spectra of InxGa1-xAs on InP[J]. Physical Review B, 1988, 38(5): 3280-3286.
Emura S, Gonda S I, Matsui Y, et al. Internal-stress effects on Raman spectra of InxGa1-xAs on InP[J]. Physical Review B, 1988, 38(5): 3280-3286.
[26] Yu S J, Asahi H, Emura S, et al. Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures[J]. Journal of Applied Physics, 1991, 70(1): 204-208.
Yu S J, Asahi H, Emura S, et al. Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures[J]. Journal of Applied Physics, 1991, 70(1): 204-208.
[27] Estrera J P, Stevens P D, Glosser R, et al. Phonon mode study of near-lattice-matched InxGa1-xAs using micro-Raman spectroscopy[J]. Applied Physics Letters, 1992, 61(16): 1927-1929.
Estrera J P, Stevens P D, Glosser R, et al. Phonon mode study of near-lattice-matched InxGa1-xAs using micro-Raman spectroscopy[J]. Applied Physics Letters, 1992, 61(16): 1927-1929.