中国激光, 2002, 29 (3): 193, 网络出版: 2006-08-08   

MOVPE生长1.3 μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究

Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers
作者单位
1 华中科技大学激光技术国家重点实验室,湖北武汉,430074
2 武汉邮电科学研究院国家光电子工艺中心武汉分部,湖北武汉,430074
摘要
通过低压金属有机化学气相外延(LP-MOVPE)工艺生长了AlGaInAs应变补偿量子阱材料,通过X射线双晶衍射、光荧光、二次离子质谱的测试分析得到了材料生长的优化工艺参数,降低了材料中的氧杂质含量,得到了高质量AlGaInAs应变补偿量子阱材料,室温光致发光半宽FWHM=26 meV.采用此外延材料成功制作了1.3 μm无致冷AlGaInAs应变量子阱激光器, 器件测试结果为:激射波长:1290 nm≤λ≤1330 nm;阈值电流:Ith(25℃)≤15 mA;Ith(85℃)≤25 mA;量子效率变化:Δηex(25~85℃)≤1.0 dB.
Abstract
AlGaInAs strain-compensated quantum wells have been grown by LP-MOVPE. By X-ray diffraction, photoluminescence and SIMS, the properties of the materials and the oxygen concentration in AlGaInAs materials are analyzed. A high quality (PL FWHM=26 meV: room temperature) AlGaInAs strain-compensated quantum well through optimized MOVPE process is obtained. By the wafers, the 1.3 μm uncooled AlGaInAs strain-compensated quantum well lasers have been fabricated. The results of the laser chips are: 1290 nm≤λ≤1330 nm, I th(25℃)≤15 mA, I th(85℃)≤25 mA and Δη ex(25~85℃)≤1.0 dB.
参考文献

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马宏, 易新建, 金锦炎, 杨新民, 李同宁. MOVPE生长1.3 μm无致冷AlGaInAs/InP应变补偿量子阱激光器研究[J]. 中国激光, 2002, 29(3): 193. 马宏, 易新建, 金锦炎, 杨新民, 李同宁. Study on MOVPE Growth of 1.3 μm Uncooled AlGaInAs/InP Strain-compensated Quantum Well Lasers[J]. Chinese Journal of Lasers, 2002, 29(3): 193.

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