2 μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究
安宁, 刘国军, 刘超, 李占国, 刘鹏程, 魏志鹏, 方玄, 马晓辉. 2 μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究[J]. 半导体光电, 2015, 36(2): 205.
AN Ning, LIU Guojun, LIU Chao, LI Zhanguo, LIU Pengcheng, WEI Zhipeng, FANG Xuan, MA Xiaohui. Numerical Study on 2μm InGaAsSb/AlGaAsSb Strain-compensated Quantum Wells[J]. Semiconductor Optoelectronics, 2015, 36(2): 205.
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安宁, 刘国军, 刘超, 李占国, 刘鹏程, 魏志鹏, 方玄, 马晓辉. 2 μm InGaAsSb/AlGaAsSb应变补偿量子阱结构的数值研究[J]. 半导体光电, 2015, 36(2): 205. AN Ning, LIU Guojun, LIU Chao, LI Zhanguo, LIU Pengcheng, WEI Zhipeng, FANG Xuan, MA Xiaohui. Numerical Study on 2μm InGaAsSb/AlGaAsSb Strain-compensated Quantum Wells[J]. Semiconductor Optoelectronics, 2015, 36(2): 205.
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