光学学报, 1992, 12 (10): 897, 网络出版: 2007-09-11
MOCVD法生长Ca0.5In0.5P外延层的近红外光致发光与温度的依赖关系
Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method
近红外光致发光 深能级 金属有机物化学气相沉积 near-infrared photoluminescence deep level metalorganic chemical Vapor deposition Ga0.5In0.5P Ga0.5In0.5P
摘要
测量了用金属有机物化学气相沉积(MOCVD)方法在GaAs衬底上生长的Ga0.5In0.5P外延层的近红外光致发光光谱,观察到三个与深能级有关的发光带,其峰值能量分别为1.17,0.99和0.85eV.研究了这些发光带的发光强度,峰值位置和半宽度随温度的变化关系,并初步分析其来源.
Abstract
The near-Infrared photoluminescence spectroscopies of Ga0.5In0.5P epilayer grown on GaAs substrate by metalorganic chemical vapor deposition (MOCVD) are measured. Three photoluminegcence peaks from deep levels are observed, and their peak energies are 1.17, 0.99 and 0.85eV, respectively. We further investigate the temperature dependence of the intensity, peak position and half width of the photoluminescence bands and discuss their origins.
高瑛, 赵家龙, 刘学彦, 苏锡安, 梁家昌, 李景, 关兴国, 章其麟. MOCVD法生长Ca0.5In0.5P外延层的近红外光致发光与温度的依赖关系[J]. 光学学报, 1992, 12(10): 897. 高瑛, 赵家龙, 刘学彦, 苏锡安, 梁家昌, 李景, 关兴国, 章其麟. Temperature dependence of the near-infrared photoluminescence spectroscopies in Ga0.5In0.5P epilayer grown on GaAs substrate by MOCVD method[J]. Acta Optica Sinica, 1992, 12(10): 897.
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