Author Affiliations
Abstract
School of Optoelectronics, Beijing Institute of Technology, Key Laboratory of Photoelectronic Imaging Technology and Systems, Beijing Engineering Research Centre for Mixed Reality and Advanced Display Technology, Beijing 100081, China
A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3–5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimizing the parameters for the proposed structure, the absorption of the PtSi layer is dramatically improved. The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency (EQE) enhancement of 2.46 times at 3–3.6 μm and 2.38 times at 3.6–5 μm compared to conventional structures. This improvement in the EQE mainly lies in the increase of light path lengths within the PtSi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.
040.5160 Photodetectors 250.5403 Plasmonics 050.1950 Diffraction gratings Chinese Optics Letters
2016, 14(7): 070401
1 北京理工大学 光电学院, 北京 100081
2 中国电子科技集团公司第44研究所 固体图像传感器事业部, 重庆 400060
为提高铂硅肖特基势垒红外探测器的量子效率, 文章将平坦的铂硅-p型硅金半接触界面设计成光栅结构, 利用光栅耦合激发表面等离子波效应提高铂硅红外探测器光耦合效率.采用严格耦合波分析方法优化了光栅结构参数以及模拟了探测器在等离子共振波长处的电场分布.最后探讨了光耦合效率与铂硅红外探测器量子效率的定量关系, 发现在3~5 μm波段光栅结构的量子效率较平坦结构能提高2倍多, 在波长3 μm和3.4 μm时分别提高294和2.5倍.
铂硅红外探测器 表面等离子波 光栅耦合 量子效率 PtSi infrared detector surface plasma waves grating coupling quantum efficiency
设计了一种偏压可调电流镜积分(Current Mirroring Integration，CMI)红外量子阱探测器焦平面 CMOS读出电路。该电路适应根据偏压调节响应波段的量子阱探测器，其中探测器偏压从 0.61 V到 1.55 V范围内可调。由于 CMI的电流反馈结构，使得输入阻抗接近 0，注入效率达 0.99；且积分电容可放在单元电路外，从而可以在一定的单元面积下，增大积分电容，提高了电荷处理能力和动态范围；为提高读出电路的性能，电路加入撇除(Skimming)方式的暗电流抑制电路。采用特许半导体(Chartered)0.35 μm标准 CMOS工艺对所设计的电路(16×1阵列)进行流片，测试结果表明：在电源电压为 3.3 V，积分电容为 1.25 pF时，电荷处理能力达到 1.3×107个电子；输出摆幅达到 1.76 V；功耗为 25 mW；动态范围为 75 dB；测试结果显示 CMI可应用于高性能 FPA。
量子阱探测器焦平面 读出电路 电流镜积分 QWIP FPA readout circuit current mirroring integration
