Author Affiliations
Abstract
1 State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
2 Institute of Modern Optics, Nankai University, Tianjin 300071, China
3 Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Tianjin 300071, China
-based avalanche photodetectors (APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein, we construct an APD consisting of epitaxial /La0.8Ca0.2MnO3 heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance -based electronics and optoelectronics.
avalanche photodetector Ga2O3 solar-blind pn junction Chinese Optics Letters
2023, 21(5): 051604
1 东北林业大学理学院, 黑龙江 哈尔滨 150040
2 哈尔滨工业大学可调谐激光技术国家级重点实验室, 黑龙江 哈尔滨 150001
等离子体状态是决定极紫外光源功率和转换效率的最重要因素之一, 理论和实验研究上Xe气流量对放电等离子体极紫外光源辐射谱和等离子体状态的影响, 对于优化光源工作条件具有重要的意义。 理论上, 采用碰撞-辐射模型, 模拟了非局部热力学平衡条件下, 不同电离度的离子丰度分布随电子温度和离子密度的变化。 推导了Xe8+~Xe11+离子4d-5p跃迁谱线强度随电子温度的变化趋势。 实验上, 采用毛细管放电机制, 利用罗兰圆谱仪测量和分析了不同等离子体密度条件下, 放电等离子体极紫外光谱的变化, 分析了Xe气流量对等离子体状态的影响。 理论和实验结果表明: 相同的电流条件下, 等离子体箍缩时的平均电子温度随着Xe气流量的增加而降低。 对于4d-5p跃迁, 低电离度离子与高电离度离子谱线强度的比值随着温度的增加而减少。 电流28 kA、 Xe气流量0.4 sccm(cm3·min-1)时, 等离子体Z 箍缩平均电子温度位于29 eV附近。 Xe气流量增加时, 受离子密度和最佳电子温度的影响, 实现Xe10+离子4d-5p跃迁13.5 nm(2%带宽)辐射谱线强度最优化的Xe气流量位于0.3~0.4 sccm之间。
放电等离子体 极紫外辐射 毛细管放电 极紫外光源 Discharge produced plasma EUV emission Capillary discharge EUV source 光谱学与光谱分析
2017, 37(8): 2560
