1 中国科学院上海光学精密机械研究所, 上海 201800
2 暨南大学理工学院光电工程系, 广州 510000
稀土离子掺杂氟化物晶体具有宽透光波段高透过率、低声子能量、长荧光寿命、负热光系数等优良特性, 可以产生从紫外到中红外波段激光, 是一类重要的激光增益介质。本文综述了本团队在稀土离子掺杂LiLuF4、LiYF4、BaY2F8、LaF3、PbF2、CeF3等氟化物晶体生长、光学和激光性能等方面的研究进展, 总结了稀土离子共掺敏化、退激活、能级耦合调控以及多离子发光等方面的研究工作, 展望了稀土离子掺杂氟化物激光晶体的研究发展趋势。
稀土离子 氟化物晶体 激光晶体 晶体生长 光学性能 激光性能 rare-earth ion fluoride crystal laser crystal crystal growth optical property laser property 人工晶体学报
2022, 51(9-10): 1573
中国科学院上海光学精密机械研究所, 中国科学院强激光材料重点实验室, 上海 201800
钛宝石 (Ti:Al2O3) 激光晶体具有高硬度、高热导、宽带吸收、宽带发射等性能特点, 广泛应用于可调谐、高功率和超快激光领域。近年来, 钛宝石晶体的生长技术、基础理论分析和器件化应用都得到了极大的发展, 对其进行的研究也越来越深入、广泛。综述了钛宝石晶体材料研究和应用的主要进展。
材料 钛宝石晶体 性能 晶体生长方法 残余红外吸收 器件应用 material titanium doped sapphire crystal characteristics crystal growth method residual infrared absorption device application
1 中国科学院上海光学精密机械研究所, 强激光材料重点实验室, 上海 201800
2 暨南大学理工学院光电工程系, 广州 510000
3 中国科学院大学, 材料与光电研究中心, 北京 100049
4 中国科学院上海光学精密机械研究所, 强激光材料重点实验室, 上海 2018003
中红外激光晶体材料作为激光技术核心增益材料之一, 在**光电对抗、激光医疗、卫星遥感、环境监测、基础科学等领域具有非常重要的应用。本文介绍了近年来在中红外氟化物激光晶体材料中, 关于晶体生长、光学性能优化以及中红外激光性能等方面的研究工作, 特别是在中红外光学性能优化调控方面, 主要介绍基于稀土能级耦合的相互作用, 有效抑制发光离子的自终止效应, 以及为发光离子提供有效泵浦通道。
中红外氟化物激光晶体 晶体生长 光学性能优化 中红外激光性能 mid-infrared fluoride laser crystal crystal growth optical performance optimization mid-infrared laser performance
Author Affiliations
Abstract
1 State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China
2 Key Laboratory of High Power Laser Materials, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
3 College of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Praseodymium-ion-doped gain materials have the superiority of lasing at various visible wavelengths directly. Simple and compact visible lasers are booming with the development of blue laser diodes in recent years. In this Letter, we demonstrate the watt-level red laser with a single blue laser diode and Pr:YLiF4 crystal. On this basis, the passively Q-switched pulse lasers are obtained with monolayer graphene and Co:ZnO thin film as the Q-switchers in the visible range.
140.3480 Lasers, diode-pumped 140.3540 Lasers, Q-switched 140.7300 Visible lasers Chinese Optics Letters
2019, 17(7): 071402
1 中国科学院电子学研究所, 北京 100190
2 中国科学院大学, 北京 100049
3 中国科学院上海光学精密机械研究所, 上海 201800
处于3~5 μm波段的激光源在遥感、环境保护、医疗、通信和红外对抗等民用和军用领域都有广阔的应用前景。Fe2+:ZnSe晶体由于在材料特性和光学特性等方面都具有明显优势,是3~5 μm波段极具潜力的激光介质之一。在室温条件下利用自制非链式脉冲HF激光器作为泵浦光源, 对晶体直径为10 mm, 厚度1 mm, Fe2+离子掺杂浓度为3×1019/cm3的Fe2+:ZnSe晶体进行了研究, 获得了中心波长4 295 nm、最大输出能量78.8 mJ的中红外激光输出。输出激光能量相对于晶体吸收泵浦能量的转换效率为27.7%, 斜率效率达28.8%。采用小角度(3°)斜入射的方案很好地解决了Fe2+:ZnSe激光器谐振腔镜镀膜问题。
中红外激光 Fe2+:ZnSe晶体 脉冲HF激光 小角度斜入射泵浦 mid-infrared laser Fe2+:ZnSe crystal pulsed HF laser pump at a small angle 红外与激光工程
2018, 47(10): 1005001
Author Affiliations
Abstract
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
3 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, China
A Ti:sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method (HEM). The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit (FOMs) at different positions of the crystal were measured and the FOM value in the central region was found to reach 90. The transmittance laser beam was intact with no obvious distortions and had only a small deformation compared with the incident laser beam. A small-signal amplification experiment was performed on the Ti:sapphire crystal and a gain of more than 6 times was achieved with a pump energy density of 1.98 J/cm2. These tests indicate that the 235 mm Ti:sapphire crystal has excellent optical qualities and will further improve the energy output of a 10 PW laser system.
140.3280 Laser amplifiers 140.3590 Lasers, titanium 140.5560 Pumping Chinese Optics Letters
2018, 16(7): 071401
1 中国科学院电子学研究所先进激光技术部, 北京 100190
2 中国科学院大学, 北京 100190
3 西安电子科技大学, 陕西 西安 710071
4 中国科学院上海光学精密机械研究所, 上海 201800
Fe2+∶ZnSe晶体作为3~5 μm波段极具潜力的中红外激光介质之一, 在材料特性和转换效率等方面具有明显优势。对Fe2+∶ZnSe晶体的吸收特性进行了研究, 利用自制放电引发的非链式脉冲HF激光抽运Fe2+掺杂浓度为4×1018 cm-3、尺寸为10 mm×10 mm×5 mm的Fe2+∶ZnSe 晶体, 在室温下获得了65 mJ 的高能量Fe2+∶ZnSe中红外激光输出, 光光转换效率为31%, 输出激光能量相对于晶体吸收抽运光能量的斜率效率可达37%。
激光器 中红外激光 Fe2+∶ZnSe激光 脉冲HF激光 过渡金属离子掺杂Ⅱ-Ⅵ族化合物
Author Affiliations
Abstract
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100049, China
3 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
We experimentally compare the output abilities of lightly and heavily doped Ti:Sapphire (Ti:S) amplifiers with diameters as large as 150 mm. Although a lightly doped Ti:S is more favorable to overcome parasitic lasing (PL) and transverse amplified spontaneous emission (TASE), the self-phase-modulation (SPM) effect becomes more pronounced when a longer crystal is used. Recompression of the amplified, stretched pulses can be seriously affected by the SPM effect. We then propose a temporal multi-pulse pump scheme to suppress PL and TASE in a thin, heavily doped Ti:S crystal. This novel temporal multi-pulse pump technique can find potential applications in 10 PW chirped-pulse amplification laser systems.
140.3280 Laser amplifiers 140.3590 Lasers, titanium 140.5560 Pumping Chinese Optics Letters
2017, 15(9): 091401
1 中国科学院上海光学精密机械研究所 空间激光信息技术研究中心, 上海 201800
2 沈阳师范大学 物理科学与技术学院, 辽宁 沈阳 110034
为探索同带泵浦掺杂Ho3+激光晶体1.2 μm波段红外激光输出, 采用掺杂浓度为1 at%的Ho3+: LLF激光晶体作为激光增益介质, 应用两种典型准三能级理论模型, 计算了Ho3+在5I6和5I8 能级间跃迁辐射1.19 μm激光的阈值功率, 分析了泵浦光和激光束腰半径、激光晶体长度、吸收损耗、腔镜反射率等参量与阈值功率的变化关系, 得出了吸收损耗是影响阈值功率最敏感因素的重要结论, 确定了泵浦阈值功率的范围, 为后续1.2 μm波段红外激光实验研究提供了可靠的理论参考数据.
1.2 μm红外激光 同带泵浦 Ho3+激光晶体 阈值功率 1.2 μm infrared laser in-band pumped Ho3+-doped crystal threshold power
Author Affiliations
Abstract
1 State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 Key Laboratory of Materials for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
A passively Q-switched mode-locked (QML) Tm:LiLuF4 (LLF) laser with a MoS2 saturable absorber (SA) is demonstrated for the first time, to our best knowledge. For the Q-switching mode, the maximum average output power and Q-switched pulse energy are 583 mW and 41.5 μJ, respectively. When the absorbed power is greater than 7.4 W, the passively QML pulse is formed, corresponding to an 83.3-MHz frequency. The modulation depth in Q-switching envelopes is approximately 50%. Results prove that MoS2 is a promising SA for Q-switched and QML solid-state lasers.
140.3070 Infrared and far-infrared lasers 140.3380 Laser materials 140.3580 Lasers, solid-state Chinese Optics Letters
2015, 13(8): 081405
