Author Affiliations
Abstract
1 Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
2 Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China
3 State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The tilted energy band in the multiple quantum wells (MQWs) arising from the polarization effect causes the quantum confined Stark effect (QCSE) for [0001] oriented III-nitride-based near ultraviolet light-emitting diodes (NUV LEDs). Here, we prove that the polarization effect in the MQWs for NUV LEDs can be self-screened once the polarization-induced bulk charges are employed by using the alloy-gradient InxGa1-xN quantum barriers. The numerical calculations demonstrate that the electric field in the quantum wells becomes weak and thereby flattens the energy band in the quantum wells, which accordingly increases the spatial overlap for the electron-hole wave functions. The polarization self-screening effect is further proven by observing the blueshift for the peak emission wavelength in the calculated and the measured emission spectra. Our results also indicate that for NUV LEDs with a small conduction band offset between the quantum well and the quantum barrier, the electron injection efficiency for the proposed structure becomes low. Therefore, we suggest doping the proposed quantum barrier structures with Mg dopants.
230.3670 Light-emitting diodes 230.5590 Quantum-well, -wire and -dot devices Chinese Optics Letters
2019, 17(12): 122301
1 河北工业大学电子信息工程学院微纳光电和电磁技术创新研究所, 天津 300401
2 天津市电子材料和器件重点实验室, 天津 300401
国家自然科学基金、河北省自然科学基金、天津市自然科学基金、人社部留学人员科技活动项目择优资助优秀类、河北省计划项目、河北省高校百名优秀创新人才支持计划;
光学器件 AlGaN 深紫外发光二极管 外量子效率 空穴注入效率 光输出功率 激光与光电子学进展
2019, 56(6): 060001
