为研究铯离子作为入射源轰击微通道板性能测试技术，采用铯离子束产生器作为实验装置，分析整个铯离子束产生过程，进而研究铯原子轰击离化丝（钽，脱出功为4.12 eV）而产生的铯等离子体的离化效率的影响因素.从物理过程分析出离化效率受离化环境温度、离化丝功率、聚焦电压等因素的影响，结合沙哈-朗缪尔（Saha-Langmuir）方程，分析出出射离子电流可作为离化效率的实际表征量.实验通过改变离化环境温度、离化丝功率等因素，采用运放反馈电流法测量离子电流的大小.实验结果表明通过控制离化环境温度可维持输入铯原子数的稳定，铯离子的离化效率受离化环境温度和离化丝功率影响较大.当其他工作条件不变，离化丝功率Q_c为2.818 W时，离化效率达到最大；当离化环境温度T_c为110 ℃时，离化过程稳定且最充分，输出离子电流最大达到25 nA左右.实验结果与理论模型分析结果具有较好的一致性.通过对这些因素的控制可稳定调节铯离子束入射强度的大小.

Metasurfaces have demonstrated unprecedented capabilities in manipulating light with ultrathin and flat architectures. Although great progress has been made in the metasurface designs and function demonstrations, most metalenses still only work as a substitution of conventional lenses in optical settings, whose integration advantage is rarely manifested. We propose a highly integrated imaging device with silicon metalenses directly mounted on a complementary metal oxide semiconductor image sensor, whose working distance is in hundreds of micrometers. The imaging performances including resolution, signal-to-noise ratio, and field of view (FOV) are investigated. Moreover, we develop a metalens array with polarization-multiplexed dual-phase design for a wide-field microscopic imaging. This approach remarkably expands the FOV without reducing the resolution, which promises a non-limited space-bandwidth product imaging for wide-field microscopy. As a result, we demonstrate a centimeter-scale prototype for microscopic imaging, showing uniqueness of meta-design for compact integration.