A vapor cell provides a well-controlled and stable inner atmosphere for atomic sensors, such as atomic gyroscopes, atomic magnetometers, and atomic clocks, and its hermeticity affects the stability and aging of atomic sensors. We present the micro-fabrication of a micro-electromechanical system wafer-level hermit vapor cell based on deep reactive ion etching and vacuum anodic-bonding technology. The anodic-bonding process with the voltage increasing in steps of 200 V had a critical influence on vapor cell hermeticity. Further, the silicon–glass bonding surface was experimentally investigated by a scanning electron microscope, which illustrated that there were no visual cracks and defects in the bonding surface. The leak rate was measured using a helium leak detector. The result shows that the vapor cells with different optical cavity lengths comply with the MIL-STD-883E standard (5 × 10 ⁸ mbar·L/s). Moreover, D2 absorption spectroscopy was characterized via optical absorption. The bonding strength was determined to be 13 MPa, which further verified the quality of the vapor cells.

As the key part of chip-scale atomic clocks (CSACs), the vapor cell directly determines the volume, stability, and power consumption of the CSAC. The reduction of the power consumption and CSAC volumes demands the manufacture of corresponding vapor cells. This overview presents the research development of vapor cells of the past few years and analyzes the shortages of the current preparation technology. By comparing several different vapor cell preparation methods, we successfully realized the micro-fabrication of vapor cells using anodic bonding and deep silicon etching. This cell fabrication method is simple and effective in avoiding weak bonding strengths caused by alkali metal volatilization during anodic bonding under high temperatures. Finally, the vapor cell D2 line was characterized via optical-absorption resonance. According to the results, the proposed method is suitable for CSAC.