Author Affiliations
Abstract
1 Qingdao University, College of Physics Science, Center for Marine Observation and Communications, Qingdao, China
2 Shandong University, School of Physics, State Key Laboratory of Crystal Materials, Jinan, China
Femtosecond laser inscription or writing has been recognized as a powerful technique to engineer various materials toward a number of applications. By efficient modification of refractive indices of dielectric crystals, optical waveguides with diverse configurations have been produced by femtosecond laser writing. The waveguiding properties depend not only on the parameters of the laser writing but also on the nature of the crystals. The mode profile tailoring and polarization engineering are realizable by selecting appropriate fabrication conditions. In addition, regardless of the complexity of crystal refractive index changes induced by ultrafast pulses, several three-dimensional geometries have been designed and implemented that are useful for the fabrication of laser-written photonic chips. Some intriguing devices, e.g., waveguide lasers, wavelength converters, and quantum memories, have been made, exhibiting potential for applications in various areas. Our work gives a concise review of the femtosecond laser-inscribed waveguides in dielectric crystals and focuses on the recent advances of this research area, including the fundamentals, fabrication, and selected photonic applications.
femtosecond laser writing femtosecond laser inscription optical waveguides dielectric crystals laser crystals nonlinear optical crystals waveguide lasers frequency/wavelength conversion quantum photonic chip quantum memories Advanced Photonics
2022, 4(2): 024002
Author Affiliations
Abstract
1 Peking University, School of Physics, State Key Laboratory for Mesoscopic Physics, Beijing, China
2 Peking University, Frontiers Science Center for Nano-Optoelectronics, Collaborative Innovation Center of Quantum Matter, Beijing, China
3 Shanxi University, Collaborative Innovation Center of Extreme Optics, Taiyuan, China
4 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, China
Entanglement is one of the most vital properties of quantum mechanical systems, and it forms the backbone of quantum information technologies. Taking advantage of nano/microfabrication and particularly complementary metal-oxide-semiconductor manufacturing technologies, photonic integrated circuits (PICs) have emerged as a versatile platform for the generation, manipulation, and measurement of entangled photonic states. We summarize the recent progress of quantum entanglement on PICs, starting from the generation of nonentangled and entangled biphoton states, to the generation of entangled states of multiple photons, multiple dimensions, and multiple degrees of freedom, as well as their applications for quantum information processing.
quantum entanglement integrated optics photonic chip Advanced Photonics
2021, 3(6): 064002
红外与激光工程
2021, 50(7): 20211056
1 Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing0092, China
2 Beijing ZX Intelligent Chip Technology Co., Ltd., Beijing100876,China
3 The 11th Research Institute of China Electronic Science & Technology Group Inc., Beijing100015,China
光子人工智能芯片以光速执行运算,且具有低功耗、延迟低、抗电磁干扰的优势。小型化与集成化是实现这一技术革新的关键步骤。本文将光刻技术运用于衍射光栅的制作,提出一种基于10.6微米激光的全光衍射深度学习神经网络光栅设计及实现方法。由于光源波长由毫米波向微米波进化,神经元的特征尺度缩小至20微米,与现有光衍射神经网络相比,深度学习神经网络特征尺寸缩小了80倍,为进一步实现光子计算芯片大规模集成奠定了基础。
光子芯片 衍射光栅 深度学习 神经网络 Photonic chip diffraction grating deep learning neural network
1 中国科学院 长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 130033
2 中国科学院大学, 北京 100049
随着超高速光互连、相干光通信、相干检测等技术的不断发展, 对激光光源的线宽、相频噪声、可调谐性和稳定性等都提出了更为严格的要求。利用基于CMOS(Complementary Metal Oxide Semiconductor)工艺的硅光子芯片与半导体增益芯片各自的优势, 将二者准单片集成实现结构紧凑、低功耗和高稳定性的窄线宽半导体激光器成为近年的研究热点。该结构可通过微环谐振器、环形反射镜和马赫曾德干涉仪等提供光反馈压窄线宽, 并实现宽调谐范围和稳定功率输出。本文主要阐述了硅光子芯片外腔半导体激光器的最新研究进展, 针对几种包含微环谐振器的结构进行了分类介绍, 深入讨论了增加耦合效率和降低端面反射率等技术难题。针对未来空间光通信和光互连等应用前景, 展望了该类激光器在功率提升和光子集成方面的未来发展方向。
窄线宽 可调谐激光器 硅光子芯片 外腔 半导体激光器 narrow linewidth tunable laser silicon photonic chip external cavity semiconductor laser
电子科技大学光纤传感与通信教育部重点实验室, 四川 成都 611731
根据磁光非互易相移原理,通过分析硅基磁光波导中导波光模式对磁化强度的敏感性,提出一种CeYIG/Si-CeYIG/SiO2硅基磁光波导结构,仿真分析了其模场分布和有效折射率的磁化强度依赖关系。将两个硅基磁光波导垂直放置并分别组成两个微环谐振器,进而设计出三维磁场传感芯片,通过测量两个微环中TE和TM两种模式下微环谐振波长的移动,可获得磁化强度或磁场的大小和方向信息。研究表明,在1 550 nm波长附近,通过优化波导截面尺寸,在CeYIG饱和磁化范围内,该磁场传感芯片在其法向和切向的磁场灵敏性分别为和,谐振波长的可移动范围约为200 pm。利用平面芯片结构实现了对三维磁场的测量,对三维磁场传感器件的小型化和集成化具有一定的指导意义。
磁场传感 磁光非互易相移 微环谐振器 硅光子芯片 集成光器件 magnetic field sensing magneto-optical non-reciprocal phase shift microring resonator silicon photonic chip integrated optical device