采用连续过滤快速横向生长技术, 有效增大了磷酸二氢钾(KDP)晶体的Z向长度, 提高了单位晶体II类元件的切片率。使用不同剂量的γ射线辐照II类晶体坯片后, 测试其光学性能与抗激光损伤阈值。研究结果显示, 不同剂量的γ射线辐照不会改变晶格内部的振动模式, 但会降低912 cm-1处的晶格振动强度; γ射线辐照诱导缺陷的种类不变, 但随着辐照剂量的增大, 缺陷浓度增大; 晶体坯片的损伤阈值随着辐照剂量的增大而减小。

Rapid growth processing of KDP crystals was improved by employing continuous filtration to eliminate bulk defects. The performances of the KDP crystals, including scattering defects, laser damage resistance and transmittance, were measured and analyzed. Compared with rapid-grown KDP without continuous filtration, the transmittance in the nearinfrared was increased by at least 2%, almost all of ‘micron size’ defects were eliminated and ‘sub-micron size’ defects were decreased by approximately 90%. Laser damage testing revealed that the laser-induced damage thresholds (LIDTs), as well as the consistency of the LIDTs from sample to sample, were improved greatly. Moreover, it identified that ‘micron size’ defects were the precursors which initiated laser damage at relative lower laser fluence (4–6 J cm-2), and there was a lower correlation between smaller size scattering defects and laser damage initiation. The improved consistency in the LIDTs, attributed to elimination of ‘micron size’ defects, and LIDT enhancement originated from the decreased absorption of the KDP crystals.

探讨了掺杂酸性络合剂和连续过滤两种溶液处理方法分别对KDP晶体和DKDP晶体快速生长和光学质量的影响, 测定了不同部位晶体样品的光学质量, 包括透过率, 散射点分布情况和激光的损伤阈值。实验表明适量的络合剂能提高生长晶体的质量：晶体中杂质金属离子含量明显减少, 紫外波段的透过率得到增加, 晶体内部散射点密度明显降低。采用连续过滤条件生长DKDP单晶, 光学质量测试的结果显示：晶体散射点密度显著降低, 激光损伤阈值得到提高。