作者单位
摘要
1 福州大学化学学院,福州350116
2 中国科学院福建物质结构研究所,福州350002
受到晶体尺寸以及非线性光学性能的影响,目前可供选择的非线性晶体非常有限。DKDP晶体作为传统大尺寸光电材料,在光参量啁啾脉冲放大(OPCPA)装置中得到了应用。高氘化的DKDP晶体有更好的光学性能,然而生长出高氘化DKDP晶体对生长环境等有更加严格的要求。本文通过改良的原料合成罐以及生长槽,采用点籽晶快速生长法成功生长出高氘DKDP晶体。按照Ⅰ类(θ=37.23°, φ=45°)切割方式制备样品,并对其氘含量、透过率、光学均匀性以及晶体激光损伤阈值进行测试。实验结果表明,晶体的平均氘含量达到98.49%,在可见近红外波段下具有较宽的透过波段和较高的透过性能。Ron1的测试结果显示,在3 ns、527 nm条件下,DKDP晶体的激光损伤阈值达到了19.92 J/cm2。晶体光学均匀性均方根达到了1.833×10-9,表明晶体具有良好的光学均匀性。
非线性晶体 高氘 点籽晶快速生长法 光学性能 Ⅰ类 DKDP DKDP nonlinear crystal OPCPA OPCPA highly deuterium rapid growth of point seed crystal optical property type I 
人工晶体学报
2022, 51(12): 2009
作者单位
摘要
1 福州大学化学学院,福州 350116
2 中国科学院福建物质结构研究所,福州 350002
3 福建师范大学化学与材料学院,福州 350007
磷酸二氢钾(KDP)类晶体快速生长主要采用点籽晶快速生长方法,三维生长的点籽晶不可避免的会使晶体产生柱锥交界线,从而影响晶体的性能和质量。本文通过所设计的载晶架,改进传统点籽晶快速生长方法,采用点籽晶定向生长方法,成功生长出磷酸二氘钾晶体(70%DKDP),避开生长晶体中的柱锥交界线取片,并对其氘含量、透过率、抗激光损伤性能以及光学均匀性等指标进行了测试。结果表明:所生长的晶体氘含量符合设计要求,晶体透过率和抗激光损伤性能和传统点籽晶快速生长晶体保持一致。光学均匀性结果表明样片内部无柱锥交界线,对于大口径70%DKDP晶体的生长具有指导意义。
DKDP晶体 定向生长 快速生长 柱锥交界线 DKDP crystal directional growth rapid growth pyramid-prism boundary 
人工晶体学报
2020, 49(10): 1776
Author Affiliations
Abstract
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai201800, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China
3 School of Aerospace Engineering, Tsinghua University, Beijing100084, China
4 Department of Engineering Physics, Tsinghua University, Beijing100084, China
To reduce the seed length while maintaining the advantages of the cuboid KDP-type crystal, a long-seed KDP crystal with size $471~\text{mm}\times 480~\text{mm}\times 400~\text{mm}$ is rapidly grown. With almost the same high cutting efficiency to obtain third harmonic generation oriented samples, this long-seed KDP-type crystal can be grown with a shorter seed than that of the cuboid KDP-type crystal. The full width at half maximum of the high-resolution X-ray diffraction of the (200) crystalline face is 28.8 arc seconds, indicating that the long-seed KDP crystal has good crystalline quality. In the wavelength range of 377–1022 nm, the transmittance of the long-seed KDP crystal is higher than 90%. The fluence for the 50% probability of laser-induced damage (LID) is $18.5~\text{J}/\text{cm}^{2}$ (3 ns, 355 nm). Several test points survive when the laser fluence exceeds $30~\text{J}/\text{cm}^{2}$ (3 ns, 355 nm), indicating the good LID performance of the long-seed KDP crystal. At present, the growth of a long-seed DKDP crystal is under way.
KDP crystal long-seed rapid growth 
High Power Laser Science and Engineering
2020, 8(1): 010000e6
Author Affiliations
Abstract
1 Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 College of Chemistry, Fuzhou University, Fuzhou 350116, China
In this paper, a highly deuterated potassium dihydrogen phosphate (DKDP) crystal with sizes up to $318~\text{mm}\times 312~\text{mm}\times 265~\text{mm}$ was grown by the rapid-growth method. The synthesis tank device was specially designed to synthesize a higher deuterium concentration and high-purity DKDP solution. The deuterium content of the as-grown crystal, which was 97.9%, was determined by two methods, including infrared (IR) spectroscopy and thermo-gravimetric analysis (TGA) measurements. The performances of the 97.9% DKDP crystal, including transmission, absorption coefficient, and laser-induced damage threshold (LIDT) were measured. The results indicate that, in the near-infrared band, the transmission of the 97.9% DKDP crystal is higher than that of KDP and 70% DKDP crystals, and the absorption coefficient is lower. The LIDT of the crystal reached $23.2~\text{J}\cdot \text{cm}^{-2}$ (R-on-1, 1064 nm, 3 ns), which meets the engineering requirements for use in optical applications.
DKDP crystal large aperture highly deuterated DKDP rapid growth 
High Power Laser Science and Engineering
2019, 7(3): 03000e46
Author Affiliations
Abstract
1 Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
Rapid growth processing of KDP crystals was improved by employing continuous filtration to eliminate bulk defects. The performances of the KDP crystals, including scattering defects, laser damage resistance and transmittance, were measured and analyzed. Compared with rapid-grown KDP without continuous filtration, the transmittance in the nearinfrared was increased by at least 2%, almost all of ‘micron size’ defects were eliminated and ‘sub-micron size’ defects were decreased by approximately 90%. Laser damage testing revealed that the laser-induced damage thresholds (LIDTs), as well as the consistency of the LIDTs from sample to sample, were improved greatly. Moreover, it identified that ‘micron size’ defects were the precursors which initiated laser damage at relative lower laser fluence (4–6 J cm-2), and there was a lower correlation between smaller size scattering defects and laser damage initiation. The improved consistency in the LIDTs, attributed to elimination of ‘micron size’ defects, and LIDT enhancement originated from the decreased absorption of the KDP crystals.
continuous filtration defect KDP laser damage rapid growth 
High Power Laser Science and Engineering
2015, 3(1): 01000e13
Author Affiliations
Abstract
Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
Potassium dihydrogen phosphate (KDP) single crystals are the only nonlinear crystals currently used for electro-optic switches and frequency converters in inertial confinement fusion research, due to their large dimension and exclusive physical properties. Based on the traditional solution-growth process, large bulk KDP crystals, usually with sizes up to 600×600 mm2 so as to make a frequency doubler for the facility requirement loading highly flux of power laser, can be grown in standard Holden-type crystallizers, without spontaneous nucleation and visible defects, one to two orders of magnitude faster than by conventional methods. Pure water and KDP raw material with a few ion impurities such as Fe, Cr, and Al (less than 0.1 ppm) were used. The rapid-growth method includes extreme conditions such as temperature range from 60 to 35 ℃, overcooling up to 5C, growth rates exceeding 10 mm/day, and crystal size up to 600 mm. The optical parameters of KDP crystals were determined. The optical properties of crystals determined indicate that they are of favorable quality for application in the facility.
large-scale KDP crystals rapid growth optical quality 
High Power Laser Science and Engineering
2014, 2(1): 010000e2
作者单位
摘要
中国工程物理研究院激光聚变研究中心, 四川 绵阳 621900
主要研究大口径KDP晶体的高强度三倍频性能。采用正交偏振干涉法测量了晶体的光轴均匀性分布,并在神光III原型装置上利用快速生长二倍频晶体开展了高强度三倍频实验,验证了折射率均匀性分布对三倍频效率和近场的影响。实验结果表明,大口径快速生长KDP晶体的三倍频性能基本上满足神光III装置的要求,但快速生长晶体的受激拉曼散射增益系数和激光损伤阈值等性能仍有待进一步考核。
激光光学 快速生长技术 大口径 KDP晶体 三倍频 
中国激光
2012, 39(s1): s106005
作者单位
摘要
1 中国科学院 福建物质结构研究所, 福州 350002
2 中国科学院 上海光学精密机械研究所, 上海 201800
大尺寸磷酸二氢钾(KDP)晶体在惯性约束聚变系统中主要用于制作变频及开关光学元件。在传统生长技术基础上, 开展了点籽晶降温法大尺寸KDP晶体的快速生长技术研究, 设计制作大型培养槽及载晶架, 采用过热注种方式试验点籽晶生长, 培育出尺寸50 cm×50 cm×41 cm的KDP大单晶, 其(100)面生长速度稳定为15 mm/d。晶体在300~1 100 nm波段的透过光谱与常规生长的等同, 影响晶体生长及光学品质的主要的金属杂质离子Fe3+, Cr3+, Al3+等含量少于10-6, 晶体激光损伤基频阈值30 J/cm2, 三倍频阈值达到8.6 J/cm2。
KDP晶体 透过光谱 损伤阈值 快速生长 降温法 KDP crystal transmittance spectra laser-induced damage rapid growth temperature reduction method 
强激光与粒子束
2010, 22(12): 2857

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!