School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Al doped zinc oxide (AZO) films were prepared by mid-frequency magnetron sputtering for silicon (Si) thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of the films was studied. Results showed that high conductive and high transparent AZO thin films were achieved with a minimum resistivity of 2.45 * 10–4 Ω?cm and optical transmission greater than 85% in visible spectrum region as the films were deposited at a substrate temperature of 225°C and a low sputtering power of 160 W. The optimized films were applied as back reflectors in a-SiGe:H solar cells. A relative increase of 19% in the solar cell efficiency was achieved in comparison to the cell without the ZnO films doped with Al (ZnO:Al).
Al doped zinc oxide (AZO) films Al doped zinc oxide (AZO) films magnetron sputtering technology magnetron sputtering technology growth growth electrical and optical properties electrical and optical properties a-SiGe:H solar cells a-SiGe:H solar cells Frontiers of Optoelectronics
2015, 8(3): 298
1 桂林电子科技大学 信息材料科学与工程系,广西 桂林541004
2 桂林电子科技大学 广西信息材料重点实验室,广西 桂林541004
采用直流磁控溅射工艺,在室温条件下制备了ZnO:Al(ZAO)薄膜,研究了Al掺杂量和溅射工艺参数等对ZAO薄膜光电性能的影响。结果表明:Al掺杂量和溅射工艺参数均对薄膜的电阻率有显著影响,在Al掺杂质量分数为3%、溅射功率为100 W以及Ar压强为1.5 Pa的条件下,室温溅射淀积的ZAO薄膜可获得1.4×10-3 Ω·cm的最小电阻率;Al掺杂量和工艺参数对薄膜的透光率均无明显的影响,薄膜的平均透光率在86~90％,但随Al掺杂量和溅射功率的增加,薄膜的截止吸收边均向短波长方向移动。对薄膜优值因子的分析表明,适合采用的Ar压强值在0.6～2.0 Pa.
氧化锌铝 透明导电薄膜 光电性能 磁控溅射 ZAO transparent conducting thin films electrical and optical properties magnetron sputtering
