采用等离子体增强化学气相沉积法生长的单层本征氢化非晶硅薄膜对单晶硅片进行钝化，结果表明增加氢稀释比有利于减少薄膜中的缺陷，增强钝化效果，过量的氢稀释比会导致非晶硅在硅片表面的外延晶化生长，降低钝化效果。退火导致非晶硅晶化程度增加，降低了钝化效果，同时退火提升了薄膜的质量，改变了H键合方式，增强了钝化效果。因此，单层氢化非晶硅只有在合适的氢稀释比和退火温度才可以获得最佳钝化效果。为了提高非晶硅薄膜对硅片的钝化效果，采用具有高低氢稀释比的叠层本征非晶硅薄膜对硅片进行钝化。因此将高氢稀释比沉积的非晶硅薄膜叠层生长于低氢稀释比的薄膜之上，避免非晶硅在硅片表面的外延生长。在退火过程中，高氢稀释比薄膜中的氢扩散到低氢稀释比薄膜中，有效地钝化了非晶硅中和单晶硅表面的悬挂键，改善了非晶硅/硅片的界面质量，叠层钝化后硅片的少子寿命为7.36 ms，隐含开路电压为732 mV。

The plasma-enhanced chemical vapor deposition (PECVD) technique is well suited for fabricating optical filters with continuously variable refractive index profiles; however, it is not clear how the optical and structural properties of thin films differ when deposited on different substrates. Herein, silicon nitride films were deposited on silicon, fused silica, and glass substrates by PECVD, using silane and ammonia, to investigate the effects of the substrate used on the optical properties and structures of the films. All of the deposited films were amorphous. Further, the types and amounts of Si-centered tetrahedral Si–Si_vN_4-v bonds formed were based upon the substrates used; Si–N₄ bonds with higher elemental nitrogen content were formed on Si substrates, which lead to obtaining higher refractive indices, and the Si–SiN₃ bonds were mainly formed on glass and fused silica substrates. The refractive indices of the films formed on the different substrates had a maximum difference of 0.05 (at 550 nm), the refractive index of SiN_x films formed on silicon substrates was 1.83, and the refractive indices of films formed on glass were very close to those formed on fused silica. The deposition rates of these SiN_x films are similar, and the extinction coefficients of all the films were lower than 10^?4.

本研究提出并制备了一种以石墨烯森林为电极的摩擦纳米发电机。利用等离子体增强化学气相沉积工艺制备了与其它墙形竖直薄片状的石墨烯形貌差异较大的石墨烯森林。此石墨烯森林具有低薄膜电阻((110±5) Ω/□)以及独特的离散“树状”结构, 有利于石墨烯森林与其他电极材料之间的接触和摩擦。根据石墨烯森林的形貌优势, 将聚酰亚胺膜和石墨烯森林膜作为电极组装摩擦纳米发电机, 其开路电压可达20 V, 短路电流可达0.75 μA。此外, 还讨论了基于石墨烯森林的摩擦纳米发电机的工作原理。最后, 利用此纳米发电机点亮了演示电路中三个不同颜色的LED, 证明了石墨烯森林在摩擦纳米发电机中的有效应用。