红外与毫米波学报, 2013, 32 (4): 289, 网络出版: 2013-08-28
硫代硫酸钠浓度对电沉积制备铜锌锡硫硒薄膜性质的影响
Effect of Na2S2O3·5H2O concentration on the properties of Cu2ZnSn(S, Se)4 thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors
共电沉积 硫代硫酸钠浓度 硒化 铜锌锡硫硒薄膜 Cu2ZnSn(S Se)4 thin film Na2S2O3·5H2O concentration co-electroplating selenization
摘要
采用后硒化Cu-Zn-Sn-S电沉积预制层的方法制备了铜锌锡硫硒薄膜,其中Cu-Zn-Sn-S预制层是通过含有不同浓度的硫代硫酸钠电解液电沉积而成的.实验发现,硒化前后薄膜的性质与硫代硫酸钠浓度密切相关.SEM,EDS,XRD,Raman和透射光谱分析表明,当硫代硫酸钠的浓度为5 mM时,沉积的薄膜形貌平整,晶粒明显,组分贫锌,具有单一的铜锌锡硫硒结构,且其带隙为1.11 eV; 在浓度高于5 mM下沉积的薄膜形貌粗糙并产生杂相硒化锡; 在浓度低于5 mM下沉积的薄膜组分严重贫锌并生成大量的Cu2SnSe3.
Abstract
Cu2ZnSn(S, Se)4 films were fabricated through post-selenization of Cu-Zn-Sn-S precursors co-electroplated by varied Na2S2O3·5H2O concentrations. The property of obtained films before and after selenization shows a close dependence on the concentration of Na2S2O3·5H2O. Only the film grown by 5 mM of Na2S2O3·5H2O shows a uniform surface with faceted grains, a Zn-poor composition, a single phased Cu2ZnSn(S, Se)4 structure and a 1.11 eV band gap evidencing by SEM, EDS, XRD, Raman and transmittance spectra. More than 5 mM of Na2S2O3·5H2O additive to the electrolyte yielded the films with rougher morphology and the presence of SnSex. Less than 5 mM of Na2S2O3·5H2O additive to the electrolyte resulted in the films with highly Zn-poor content and the primary formation of Cu2SnSe3.
葛杰, 江锦春, 胡古今, 张小龙, 左少华, 杨立红, 马建华, 曹萌, 杨平雄, 褚君浩. 硫代硫酸钠浓度对电沉积制备铜锌锡硫硒薄膜性质的影响[J]. 红外与毫米波学报, 2013, 32(4): 289. GE Jie, JIANG Jin-Chun, HU Gu-Jin, ZHANG Xiao-Long, ZUO Shao-Hua, YANG Li-Hong, MA Jian-Hua, CAO Meng, YANG Ping-Xiong, CHU Jun-Hao. Effect of Na2S2O3·5H2O concentration on the properties of Cu2ZnSn(S, Se)4 thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors[J]. Journal of Infrared and Millimeter Waves, 2013, 32(4): 289.