单晶金刚石具有超宽的禁带宽度、低的介电常数、高的击穿电压、高的热导率、高的本征电子和空穴迁移率,以及优越的抗辐射性能, 是目前已知的最有前景的宽禁带高温半导体材料, 被誉为“终极半导体”。但单晶金刚石在半导体上的大规模应用还有很多技术难题急需解决。本文聚焦大尺寸(英寸级)单晶金刚石衬底的化学气相沉积合成、剥离切片及研磨抛光技术, 通过对近年来的相关文献进行整理, 综述了相关方面的国内外研究现状。在此基础上, 对未来单晶金刚石半导体材料的制备、剥离和研磨抛光进行了展望。

Single crystal diamond has ultra-wide band gap, low dielectric constant, high breakdown voltage, high thermal conductivity, high intrinsic electron and hole mobility, and excellent radiation resistance, making it the most promising wide band gap high temperature semiconductor material known so far, known as the “ultimate semiconductor”. However, there are still many technical problems to be solved in the large-scale application of single crystal diamond on semiconductors. This paper focuses on the chemical vapor deposition synthesis, stripping section and grinding and polishing technology of large size (inch) single crystal diamond substrates. By sorting out the relevant literature in recent years, the related research status at home and abroad are reviewed. On this basis, the preparation, stripping, grinding and polishing of single crystal diamond semiconductor materials in the future are prospected.