硒化铅胶体量子点（PbSe QDs）因其具有显著的多激子效应、大的激子波尔半径、宽的波长调控范围以及高的荧光量子产率等优异性能，在室温红外光电子器件领域有巨大的应用前景。然而，通过溶液法合成的PbSe QDs存在发光稳定性差和发光效率低等问题，进一步限制了它的发展，这是由量子点的表面易被氧化与载流子传输性能不佳所导致的。因此，本文围绕PbSe QDs的表面修饰工程对其迁移率、陷阱态、能级移动、发光效率以及稳定性改性方面的影响进行了系统论述，并总结了表面修饰工程在PbSe QDs太阳能电池、发光二极管和光电探测器等领域的应用现状，最后对该工程在光电子器件实际应用中存在的问题以及未来研究重点进行了展望。

Lead selenide colloidal quantum dots (PbSe QDs) have huge application prospects in room temperature infrared optoelectronic devices due to their excellent properties such as enhanced multiple exciton generation, large exciton Bohr radius, wide range of the tunable wavelength, and high photoluminescence quantum yield. However, the problems of poor photoluminescence stability and low efficiency of PbSe QDs synthesized via the solution method further limit their development owing to the oxidation of quantum dot surfaces and poor carrier transport performance. Therefore, a systematic discussion of the effects of the surface modification engineering of PbSe QDs on its mobility, trap states, energy level shift, photoluminescence efficiency, and stability modification is presented in this paper. Additionally, a summary of the application of surface modification engineering in PbSe QDs solar cells, light-emitting diodes, and photodetectors is provided. Finally, the problems existing in the practical application of optoelectronic devices and future research directions are outlined.