基于低温共烧陶瓷(LTCC)电路基板和高硅铝合金封装载体互联的多通道T/R组件对互联界面质量要求高。为了优化大尺寸LTCC基板与高硅铝合金载体钎焊后的互联强度, 该文采用试验设计方法设计了大面积LTCC基板与CE11高硅铝合金载体, 并进行了焊接试验, 利用主效应法识别出影响焊接强度的关键工艺因素是183~140℃内降温速率及焊接峰值温度, 并采用回归分析法得到以上两类参数与界面焊接强度的关系模型。通过基于随机梯度下降的Adam算法得到最优的焊接工艺参数: 降温速率为0.967 ℃/s, 峰值温度为230 ℃。基于优化后的工艺参数可得验证样件界面焊接强度为23.6 MPa, 与优化后模型预测值的相对误差为2.1%, 这证明该文的研究对大尺寸基板与高硅铝合金载体钎焊后界面强度有显著的预测和提升作用。

The high interface interconnection quality between the low temperature co-fired ceramic(LTCC)substrate and high silicon aluminum alloy carrier is required for the multichannel T/R module. In order to optimize the welding interface interconnection strength between the large-size LTCC substrate and the high silicon aluminum alloy carrier, the large area LTCC substrate and CE11 high silicon aluminum alloy carrier are designed by the experimental design method, and the welding test is carried out. The main effect method is adopted to identify that the key process factors influencing the welding interface interconnection strength are the cooling slope between the 183~140 ℃ and the welding peak temperature. The regression analysis method is used to establish the relational model between the above-mentioned two types of parameters and the interface wielding strength. The optimal welding process parameters combinations are 0.967 ℃/s for the cooling slope and 230 ℃ for the welding peak temperature by using the Adam algorithm based on the random gradient descent. Based on the optimized process parameters, the interface welding strength of the validated sample is 23.6 Pa, with a relative error of 2.1% from the predicted value of the optimized model, which proves that the study in this paper can predict and significantly improve the interface welding strength after brazing the large-size substrate and the high silicon aluminum alloy carrier.