液晶与显示, 2016, 31 (5): 460, 网络出版: 2016-06-06
不同双栅极设计对a-Si∶H TFT 特性影响
Effect of different dual gate design on A-Si∶H TFT electrical characteristics
摘要
本实验于原有的单底栅a-Si TFT产品结构下，通过增加不同的顶栅极设计方式(不同a-Si覆盖比例、不同沟道几何形貌、不同沟道W/L比例)来研究双栅极设计对a-Si TFT特性的影响。实验结果显示双栅极a-Si TFT比现行单底栅a-Si TFT可以提升Ion 7%、降低SS 3%、同时对Ioff以及TFT稳定性影响不明显，显示双栅极a-Si TFT设计结构具有在不提高成本以及不变更工艺流程下，达到整体提升TFT特性的效果。顶栅极 TFT 特性不如底栅极，推测为 a-Si/PVX 界面不佳使得电子导通困难导致，未来可以借由改善a-Si/PVX 界面工艺提升顶栅极 TFT 特性。
Abstract
Different TFT geometry design (top gate area coverage ratio, different channel shape and various W/L value) on dual gate a-Si TFT characteristics were investigated. Dual gate a-Si TFT shows better TFT characteristics than single bottom gate a-Si TFT with higher Ion 7%, lower SS 3% and comparable Ioff and stress stability. Dual gate TFT structure is an economic way to improve a-Si TFT characteristic without production cost up and additional process flow modification.The characteristics of top gate TFT is worse than bottom gate TFT due to a worse a-Si/PVX interface than GI/a-Si interface and may be improved by modifying a-Si/PVX process.
林致远, 马骏, 林亮, 杨成绍, 邹志翔, 黄寅虎, 文锺源, 王章涛. 不同双栅极设计对a-Si∶H TFT 特性影响[J]. 液晶与显示, 2016, 31(5): 460. LIN Zhi-yuan, MA Jun, LIN Liang, YANG Cheng-shao, ZOU Zhi-xiang, HUANG Yin-hu, WEN Zhong-yuan, WANG Zhang-tao. Effect of different dual gate design on A-Si∶H TFT electrical characteristics[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(5): 460.
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