微电子学, 2022, 52 (4): 689, 网络出版: 2023-01-18
一种高性能二阶荷控忆阻器电路设计与验证
Design and Verification of a High Performance Second-Order Charge-Controlled Memristor Circuit
摘要
当前忆阻器等效电路中的传统运算放大器存在功耗高、噪声大等问题。针对这些问题,基于简化差分对设计了两种极简化的运算放大器。通过电路仿真对两种简化运算放大器与传统运算放大器进行功耗与噪声仿真分析。结果表明,与三种传统运算放大器相比,该简化运算放大器的功耗最低,抗噪声性能最优。运算放大器的总功耗为15 mW,等效输出噪声电压为11.55 nV·Hz-1/2,噪声系数为35.873 dB。基于两种简化运算放大器,设计了一种二阶荷控忆阻器等效电路。通过理论分析、电路仿真和硬件电路板基实验,对该等效电路的忆阻特性进行了分析与验证。
Abstract
The traditional operational amplifier in the memristor equivalent circuit has problems such as high power consumption and large noise. To solve this problem, two extremely simplified operational amplifiers based on simplified differential pairs was designed. The power consumption and noise analysis of two simplified operational amplifiers and traditional operational amplifiers were carried out through simulation analysis. The results showed that this simplified operational amplifier circuit had the lowest power consumption and the best anti-noise performance when compared with three traditional operational amplifiers. The total power consumption was 15 mW, the equivalent output noise voltage was 11.55 nV·Hz-1/2, and the noise figure was 35.873 dB. Based on the two simplified operational amplifiers, a second-order charge-controlled memristor equivalent circuit was designed. Through theoretical analysis, circuit simulation, and the hardware circuit board-based experiment, the memristive characteristics of the equivalent circuit were analyzed and verified.
肖力, 金湘亮, 杨健, 黄诗诗. 一种高性能二阶荷控忆阻器电路设计与验证[J]. 微电子学, 2022, 52(4): 689. XIAO Li, JIN Xiangliang, YANG Jian, HUANG Shishi. Design and Verification of a High Performance Second-Order Charge-Controlled Memristor Circuit[J]. Microelectronics, 2022, 52(4): 689.