提高GaMnAs材料中Mn的含量可以提高其居里温度, 但随之而来也会引入很多缺陷。为了研究高含量Mn引入的缺陷对稀磁半导体材料的影响, 本文对低温分子束外延技术（LT-MBE）生长的GaMnAs外延层进行了光电导以及红外等光谱的分析。通过对样品的光谱分析, 发现样品中存在大量的As反位缺陷（AsGa）、Mn的间隙位缺陷（MnI）、以及在生长和退火过程中产生的Mn以及MnAs团簇等缺陷, 这些缺陷都会影响外延层的光谱特性, 同时也会影响器件的电学性能。

The Curie temperature can be increased via icreasing the Mn conceteation in GaMnAs, meanwhile, the film may have more defects. In order to research the influence of the defects on the diluted magnetic semiconductors (DMS) with high Mn concentration, the photoconduction and optical spetctra studies were carried out on the GaMnAs films grown by low temperature moleculer-beam epitaxy. The Photoluminescence（PL） and infrared measurements indicated that these films had a large density of As antisite defects, Mn interstitial defects, Mn and MnAs cluster. These defects have influenced the optics properties of GaMnAs, thus may influence the electrical properties of the device.