红外与毫米波学报, 2019, 38 (5): 598, 网络出版: 2019-11-19
基于异质结倍增层的InAlAsSb SACM雪崩光电二极管的优化
Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer
雪崩光电二极管 异质结倍增层 击穿电压 穿通电压 InAlAsSb InAlAsSb avalanche photodiode hetero-junction multiplication layer break-down voltage punch-throughvoltage
摘要
使用低工作电压的雪崩光电二极管(APD)有利于提高集成电路的稳定性和降低功耗.文章建立了一个分离吸收、电荷、倍增(SACM)型的雪崩光电二极管的模型,为了在低偏压下获得高增益同时不降低工作电压范围,这个模型采用了具有高低禁带宽度的异质结倍增层.同时,文章研究了异质结倍增层的厚度和掺杂浓度对暗电流和增益的影响.通过对掺杂浓度的优化,击穿电压和穿通电压可以同时下降.
Abstract
For avalanche photodiodes(APDs), low operation voltage is required for integrated circuit stability and low power consumption. In this paper,a model for InAlAsSb separate absorption, charge,andmultiplication(SACM)APDisestablished. Togethighergainatlowerreversedbiasvolt-age without sacrificing the operating voltage range,a high/low band gap multiplication layer is adopt-ed. Theeffectsofthethicknessanddopingconcentration ofthemultiplicationlayeronthe dark-current and the break-down voltage have been investigated. By optimization of the doping concentration,the break-down voltage and punch-through voltage can be decreased simultaneously.
蒋毅, 陈俊. 基于异质结倍增层的InAlAsSb SACM雪崩光电二极管的优化[J]. 红外与毫米波学报, 2019, 38(5): 598. JIANG Yi, CHEN Jun. Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer[J]. Journal of Infrared and Millimeter Waves, 2019, 38(5): 598.