中国激光, 2018, 45 (1): 0103003, 网络出版: 2018-01-24
氮δ掺杂Cu2O薄膜的生长及物性研究 下载: 691次
Research on Growth and Physical Properties of N δ-doped Cu2O Films
材料 等离子体增强原子层沉积 氮δ掺杂 Cu2O薄膜 NH3掺杂源 materials plasma enhanced atomic layer deposition N δ-doping Cu2O films NH3 doping source
摘要
采用等离子体增强原子层沉积(PEALD)技术, 以NH3为掺杂源, 制备了氮δ掺杂Cu2O 薄膜, 研究了N掺杂对Cu2O薄膜表面形貌、光学及电学性质的影响。研究结果表明, N掺杂引起了晶格畸变, Cu2O薄膜的表面粗糙度增大; 掺杂后Cu2O薄膜的带隙宽度从2.70 eV增加到3.20 eV, 吸收边变得陡峭; 掺杂后载流子浓度为6.32×1019 cm-3, 相比于未掺杂样品(5.77×1018 cm-3)的提升了一个数量级。
Abstract
By the plasma enhanced atomic layer deposition (PEALD) technique, the N δ-doped Cu2O films are prepared with NH3 as the doping source. The effects of N-doping on the surface morphology, optical and electrical properties of Cu2O films are studied. The study results show that the N-doping causes the lattice distortion and the surface roughness of the N δ-doped Cu2O thin films increases. The bandgap width of the N δ-doped Cu2O thin films increases from 2.70 eV to 3.20 eV, and the absorption edge becomes steep. The carrier concentration of the doped sample is 6.32×1019 cm-3, enhanced by one order of magnitude comparing with that of the un-doped samples (5.77×1018 cm-3).
李微, 潘景薪, 王登魁, 方铉, 房丹, 王新伟, 唐吉龙, 王晓华, 孙秀平. 氮δ掺杂Cu2O薄膜的生长及物性研究[J]. 中国激光, 2018, 45(1): 0103003. Li Wei, Pan Jingxin, Wang Dengkui, Fang Xuan, Fang Dan, Wang Xinwei, Tang Jilong, Wang Xiaohua, Sun Xiuping. Research on Growth and Physical Properties of N δ-doped Cu2O Films[J]. Chinese Journal of Lasers, 2018, 45(1): 0103003.