设计了一款采用 CMOS工艺的短波 320×256抗辐射加固读出电路, 分析了 CMOS工艺抗辐射的特点, 重点介绍了模拟通路、偏压产生电路和数字电路的加固设计方法, 采用了双环保护结构、对 NMOS管使用环形栅和冗余设计等措施。该设计电路经过流片, 测试结果表明该抗辐射加固设计方法有效可行。

This paper presents a 320×256 short wave radiation hardened Read-Out Integrated Circuit using CMOS process, analyses the characteristic of CMOS process. And methods on reliability design for analog path, voltage bias generating circuit and digital circuit are emphatically introduced. Measures as guard banding, edgeless NMOS transistors, redundancy design are taken. The circuit has been made and the feasibility of the design for radiation hardened was confirmed by the test results.