设计了单层 MoS2(n)/a-Si(i)/c-Si(p)/μc-Si(p+) 异质结太阳能电池结构, 采用AFORS-HET模拟软件模拟了背场层的带隙、掺杂浓度和缺陷密度等参 数对开路电压、短路电流、填充因子和转化效率的影响。结果显示, 背场层带隙在 1.5~1.7 eV 之间, 背场层的掺杂浓度大于 1×1018 cm-3 时, 该结构的太 阳能电池有比较稳定的表现。缺陷密度增加时, 太阳能电池效率随着缺陷密度的对数线性减小, 当控制缺陷密度在1011 cm-3以下时, 可以获得大于24.10%的 转化效率, 缺陷密度为 109 cm-3时, 可以获得最高29.08%的转换效率。最后研究了背场层对该结构太阳能电池的作用, 结果显示有效控制缺陷密度时, 背场 层的添加对电池效率的提升很明显。

A single-layer MoS2 (n)/a-Si(i)/c-Si (p)/μc-Si (p+) heterojunction solar cell structure was designed, and the back field′s band gap, doping concentration and defect density of the layers on open circuit voltage, short circuit current, fill factor and conversion efficiency was simulated using AFORS-HET software. The results show that the back-surface field band gap is between 1.5-1.7 eV, and the back-surface field doping concentration is greater than 1×1018 cm-3, the solar cell of this structure has a relatively stable performance. As the defect density increases, the solar cell efficiency decreases linearly with the logarithm of the defect density. When the defect density is controlled below 1011 cm-3, a conversion efficiency greater than 24.10% can be obtained, and when the defect density is 109 cm-3, the highest conversion efficiency 29.08% can be obtained. Finally, the effect of the back-surface field layer on the structure of the solar cell is studied. The results show that when the defect density is effectively controlled, the addition of the back-surface field improves the cell efficiency significantly.