半导体光电, 2011, 32 (3): 386, 网络出版: 2012-01-04
AZO/N+-Si欧姆接触的研究
Study on Ohmic Contact of AZO/N+-Si
摘要
文章介绍了AZO/N+ Si欧姆接触特性的研究和AZO/N+ Si欧姆接触的制备新方法。实验发现AZO/N+ Si的退火温度和时间对其欧姆接触特性有很大的影响,在最优的退火温度和时间条件下,测得最小比接触电阻为7.32×10-4Ω·cm2。它满足多晶硅太阳能电池的要求, 可用于高效率硅太阳能电池透明电极的制备。
Abstract
The fabrication method and electrical characteristics of AZO/N+Si(polycrystalline silicon) contact are presented. For AZO/N+Si contact system, the optimal fabrication conditions for Ohmic contact are obtained, and the minimum specific contact resistance is tested to be 7.32×10-4Ω·cm2, which can satisfy the performance requirements of devices and can be used for the fabrication of transparent electrodes in highefficiency silicon solar cells.
杨倩, 陈朝. AZO/N+-Si欧姆接触的研究[J]. 半导体光电, 2011, 32(3): 386. YANG Qian, CHEN Chao. Study on Ohmic Contact of AZO/N+-Si[J]. Semiconductor Optoelectronics, 2011, 32(3): 386.