二维过渡金属硫族化合物(TMDs)是继石墨烯之后的新型二维材料，由于其自身的独特物理化学性质在半导体、光电材料、能源储存和催化制氢等方面备受瞩目。化学气相沉积(CVD)是目前适合实现大规模制备二维材料的工艺之一，制备过程中参数的高度可控性使其具有很大优势。本文综述了近期通过CVD制备TMDs的研究进展，探讨了在CVD制备工艺中各种参数对产物生长和最终形貌的影响，包括前驱体、温度、衬底、辅助剂、压力和载气流量等。列举了一些改进的CVD制备工艺，并对其特点进行了总结。最后讨论了目前CVD制备TMDs所面临的挑战并对其发展前景进行展望。

Two-dimensional transition metal dichalcogenides (TMDs) are a new type of two-dimensional materials after graphene. Due to their unique physical and chemical properties, much attention has been attracted in semiconductors, optoelectronic materials, energy storage, and catalytic hydrogen production. Chemical vapor deposition (CVD) is currently one of the processes suitable for realizing large-scale preparation of two-dimensional materials. Due to the highly controllable parameters of CVD process, it has great advantages in the preparation of two-dimension materials. In this paper, the recent research progress on preparation of TMDs by CVD is reviewed, and the influence of various factors on the growth and final morphology of the products in CVD preparation process, including precursors, temperature, substrate, auxiliaries, pressure and carrier gas are discussed. Some improved CVD processes are listed and their characteristics are also summarized. Finally, challenges and prospects for the development of TMDs prepared by CVD are discussed.