铅基复合钙钛矿铁电材料广泛应用于机电传感器、致动器和换能器。二元铁电固溶体Pb(Ni_1/3Nb_2/3)O₃- PbTiO₃(PNN-PT)由于其在准同型相界(MPB)区域具有优异的压电、介电性能而备受关注。然而较大的介电损耗和较低的居里温度限制了其在高温高功率器件方面的应用。本研究通过引入Pb(In_1/2Nb_1/2)O₃ (PIN)作为第三组元改善PNN-PT的电学性能, 提高其居里温度; 通过两步法合成了MPB区域的三元铁电陶瓷Pb(In_1/2Nb_1/2)O₃- Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ (PIN-PNN-PT), 研究了其结构、介电、铁电和压电性能。制备的所有组分陶瓷具有纯的钙钛矿结构。随着PT含量的增加, 陶瓷结构从三方相转变为四方相。通过XRD分析得到了室温下PIN-PNN-PT体系的MPB相图。体系的居里温度由于PIN的加入得到了很大的提高, 更重要的是PIN的引入降低了PNN-PT体系的介电损耗和电导。MPB处的组分展现出了优异的电学性能, 室温下, 性能最优组分为0.30PIN-0.33PNN-0.37PT: d₃₃=417 pC/N, T_C=200 ℃, ε′= 3206, tanδ=0.033, P_r=33.5 μC/cm², E_C=14.1 kV/cm。引入PNN-PT的PIN第三组元使得体系的居里温度和压电性得到提高的同时降低了的介电损耗和电导率, 因此, PIN-PNN-PT三元铁电陶瓷在高温高功率换能器等方面具备一定的应用潜力。

Lead-based complex perovskite ferroelectric materials have been widely used as electromechanical sensors, actuators, and transducers. Among them, Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ (PNN-PT) based solid solution has been drawn much attentions of scientists for its excellent dielectric and piezoelectric properties near morphotropic phase boundary (MPB) region. However, the relatively high dielectric loss and low Curie temperature near MPB region limited its application in high temperature and high power devices. In this work, Pb(In_1/2Nb_1/2)O₃ (PIN) was introduced into PNN-PT ceramics for improving their electrical properties and Curie temperature. The ternary ferroelectric ceramics Pb(In_1/2Nb_1/2)O₃-Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ were successfully prepared by a two-step synthesis process. All samples exhibited pure perovskite phase without any secondary phase. The structure transferred from rhombohedral to tetragonal phase with increasing PT content. The MPB phase diagram of ternary system at room temperature was established based on XRD results. The values of Curie temperature were improved significantly after PIN added into PNN-PT system. Importantly, the introduction of PIN into PNN-PT system can effectively reduce dielectric loss and conductivity. The ceramics in the MPB region exhibited excellent properties. 0.30PIN-0.33PNN-0.37PT ceramic was found to have optimal properties with d₃₃=417 pC/N, T_C=200 ℃, ε′= 3206, tanδ=0.033, P_r=33.5 μC/cm² and E_c=14.1 kV/cm at room temperature, respectively. The Curie temperature and piezoelectric coefficient were improved while dielectric loss and conductivity were reduced after the introduction of PIN into PNN-PT. The enhancements of piezoelectric properties and high Curie temperature make this ternary system a promising material for high power and high temperature transducer applications.