本文介绍了聚乙烯醇（PVA）衬底薄膜晶体管（TFT）的器件制备、电学性能分析和器件溶解特性的演示。该器件以高介电材料氧化铪（HfO₂）作为绝缘层，铝掺杂氧化锌（AZO）作为有源层，铝作为栅极、源级与漏极。采用低温磁控溅射（PVD）法成功在PVA衬底上制备出高介电常数（高k ）绝缘层的薄膜晶体管，并基于该器件的绝缘层结构做了进一步优化：利用氧化铪（HfO₂）氧化铝（Al₂O₃）的叠层结构作为绝缘层。结果表明相比于单层氧化铪绝缘层结构的TFT，叠层结构绝缘层的TFT器件性能更优，具有更低的漏电流、更高的开关比和较低的亚阈值摆幅，更适合作为聚乙烯醇衬底薄膜晶体管的绝缘层。“三明治”叠层结构绝缘层的器件开/关比达到2.5×10⁶，阈值电压为10.6 V，亚阈值摆幅为0.53 V·dec^-1，载流子迁移率为3.01 cm²·V^-1·s^-1。

This paper prepared thin film transistors (TFT) on polyvinyl alcohol (PVA) substrate, investigated the electrical properties and dissolution characteristics of the transient device. The device uses the high dielectric material hafnium oxide (HfO₂) as the insulating layer,aluminum-doped zinc oxide (AZO) as active layer, aluminum is used as gate, source stage and drain.The thin-film transistors with high dielectric constant (high k) insulation layer were successfully prepared on the PVA substrate by using the high-temperature magnetron sputtering (PVD) method.Meanwhile, the insulation layer structure based on the device is further optimized,using the laminate structure of hafnium oxide (HfO₂) alumina (Al₂O₃) as the insulating layer.The results show that compared with the TFT of the single-layer hafnium oxide insulation layer structure, the TFT devices of the insulating layer of the stacked layer structure have a better performance.With lower leakage current, higher on/off ratio and lower subthreshold swing amplitude, it is more suitable as the insulating layer of the polyvinyl alcohol substrate thin film transistor.Among them, the I_on/I_off ratio, the threshold voltage, the subthreshold swing and the carrier mobility of the sandwich-stacked structure are 2.5×10⁶, 10.6 V, 0.53 V·dec^-1 and 3.01 cm²·V^-1·s^-1,respectively.