激光与光电子学进展, 2019, 56 (6): 060001, 网络出版: 2019-07-30
AlGaN基深紫外发光二极管空穴注入效率的提高途径 下载: 2247次封面文章
Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
光学器件 AlGaN 深紫外发光二极管 外量子效率 空穴注入效率 光输出功率 optical devices AlGaN deep ultraviolet LEDs external quantum efficiency hole injection efficiency light output power
摘要
国家自然科学基金、河北省自然科学基金、天津市自然科学基金、人社部留学人员科技活动项目择优资助优秀类、河北省计划项目、河北省高校百名优秀创新人才支持计划;
Abstract
Currently, the external quantum efficiency (EQE) for deep ultraviolet light-emitting diodes (DUV LEDs) with emission wavelengths shorter than 360 nm is generally lower than 10%. On one hand, the transverse-magnetic (TM) polarized light dominates the light emission from the AlN-rich AlGaN based quantum wells, which strongly reduces the light-extraction efficiency (LEE) for DUV LEDs. On the other hand, limited by the current hetero-epitaxial growth technologies for AlGaN materials, the crystal quality for DUV LEDs is still poor, which increases the non-radiative recombination rate in the active region, thereby causing the reduction of the internal quantum efficiency (IQE) for DUV LEDs. Besides, the carrier injection efficiency, especially the hole injection efficiency, also strongly influences the IQE for DUV LEDs. Thus, the researchers have made extensive efforts to increase the hole injection efficiency and thus improve the EQE for DUV LEDs. The recently proposed approaches for the improvement of the hole injection efficiency for DUV LEDs are reviewed and discussed. Moreover, the underlying physical mechanisms are disclosed in the in-depth level. These are important for the improvement of the device performances for DUV LEDs.
田康凯, 楚春双, 毕文刚, 张勇辉, 张紫辉. AlGaN基深紫外发光二极管空穴注入效率的提高途径[J]. 激光与光电子学进展, 2019, 56(6): 060001. Kangkai Tian, Chunshuang Chu, Wengang Bi, Yonghui Zhang, Zihui Zhang. Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes[J]. Laser & Optoelectronics Progress, 2019, 56(6): 060001.