激光与光电子学进展, 2017, 54 (11): 111602, 网络出版: 2017-11-17
两种液相外延模式生长GaAs0.9Sb0.1薄膜的性能 下载: 872次
Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique
薄膜 液相外延 步冷法 超冷法 GaAs0.9Sb0.1薄膜 thin film liquid phase epitaxy step-cooling super-cooling GaAs0.9Sb0.1 epilayer
摘要
分别采用液相外延瞬态法的两种不同模式--步冷法和超冷法生长了GaAs0.9Sb0.1薄膜。采用X射线衍射谱、扫描电镜、拉曼光谱仪研究了GaAs0.9Sb0.1薄膜的晶体结构、截面形貌和发光性能等。研究结果表明:与超冷法相比,步冷法生长外延薄膜的速率更加缓慢,但薄膜晶体结构的质量更高、界面更平滑;两种不同液相外延模式生长的GaAs0.9Sb0.1薄膜的光致发光性能差别不大。
Abstract
GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.
谢浩, 胡淑红, 王洋, 黄田田, 潘晓航, 孙艳, 戴宁. 两种液相外延模式生长GaAs0.9Sb0.1薄膜的性能[J]. 激光与光电子学进展, 2017, 54(11): 111602. Xie Hao, Hu Shuhong, Wang Yang, Huang Tiantian, Pan Xiaohang, Sun Yan, Dai Ning. Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111602.