红外与毫米波学报, 2002, 21 (5): 390, 网络出版: 2006-05-10
高亮度InGaN基白光LED特性研究
CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES
摘要
利用自行研制的InGaN/GaN SQW蓝光LED 芯片和YAG:Ge3+荧光粉制作了高亮度白光LED(Φ3),并对其发光强度、色度坐标、I-V、色温及显色性等特性进行了研究.实验结果表明:室温下,正向电流为20mA时,白光LED的轴向发光强度为1.1~2.3cd,正向电压小于3.5V,色度坐标为(0.28,0.34),显色指数约为70.
Abstract
High brightness white light emitting diodes(Φ3) were fabricated by using the self produced InGaN?GaN blue LED chip and YAG:Ce 3+ fluorescence. The luminous intensity, chromaticity coordinate, I V, color temperature and color rendering index were studied. The experiment result shows that in room temperature, at forward current 20mA, luminous intensity of the white LED is from 1.1cd to 2.3cd, when forward current is under 3.5V, the chromaticity coordinate is (0.28,0.34), and the color rendering index is about 70.
李忠辉, 丁晓民, 杨志坚, 于彤军 张国义. 高亮度InGaN基白光LED特性研究[J]. 红外与毫米波学报, 2002, 21(5): 390. 李忠辉, 丁晓民, 杨志坚, 于彤军 张国义. CHARACTERISTICS OF HIGH BRIGHTNESS InGaN-BASED WHITE LIGHT EMITTING DIODES[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 390.