研究了AZO（ZnO∶Al）替代ITO透明导电膜在GaN基LED中的应用，通过脉冲激光沉积和磁控溅射法制作了AZO薄膜，分析了AZO与p型GaN不良的欧姆接触的物理机理，并利用插入ITO薄层来改善接触电阻，实验用ITO 20nm/AZO 500nm的复合导电薄膜做透明导电薄膜，成功得到了波长为525.74nm、亮度为380.88mcd、电压为3.35V的GaN基绿光LED芯片，相当于单一ITO透明导电膜的性能，整个试验工艺中减少了ITO的使用量，降低了LED芯片的制造成本。

The applications of ZnO∶Al substitute ITO for transparent conductive layer in GaNbased LED were researched. AZO films were prepared by pulsed laser deposition and magnetron sputtering. Then the physical mechanism of poor ohmic contacts between AZO and ptype GaN layer was analyzed, and the contact resistance was improved by inserting ITO layer simultaneously. For the experiments, ITO 20nm/AZO 500nm composite transparent conductive layer was prepared successfully, and the GaNbased green LED was obtained with the brightness of 380.88mcd, wavelength of 525.74nm and voltage of 3.35V. The result is equivalent to the performance of a single ITO transparent conductive layer, and it reduces the usage of ITO and the process cost.