提出了一种可提高亮度均匀性的用于高分辨率硅基OLED微显示器的像素电路。该像素电路包含4个MOS管和1个电容(4T1C), 通过对不同像素驱动管之间的阈值电压(Vth)的差值进行补偿, 从而提高各个像素之间亮度均匀性。该电路采用0.18 μm 1P6M混合信号工艺完成了电路设计和仿真验证, 子像素面积仅为9 μm×3 μm, 像素密度达2 822 PPI。仿真结果表明, 在不补偿阈值电压的时候, 像素之间电流的偏差从-62.6 %变化到61.7 %, 补偿后, 像素之间电流的偏差从-14.8 %变化到11.8 %。

A pixel circuit was proposed for a high resolution OLED on silicon microdisplays with high luminance uniformity. The pixel circuit comprising four MOSFETs and one capacitor improved the luminance uniformity by compensating for the threshold voltage variation of the driving transistors. The circuit was designed and verified by the 0.18 μm mix-signal 1P6M CMOS process, the subpixel area was 9 μm×3 μm, corresponding to a resolution of 2 822 pixels per inch. Simulation results show that when the Vth variation is not compensated, the deviation of the emission current ranges from -62.6% to 61.7%, on the other hand, the emission current with compensation ranges from -14.8% to 11.8%.