光学学报, 1997, 17 (8): 1083, 网络出版: 2006-10-31
用单晶硅在Nd:YAG激光器中实现被动锁模
Passive Mode-Llocking of Nd:YAG Laser by Monocrystalline Silicon
摘要
在Nd:YAG激光器中,用单晶硅实现了被动锁模,得到了脉冲定义为28 ps左右,能量为约3 μJ的锁模脉冲,并对锁模机理作了初步解释。
Abstract
Passive mode locking in Nd:YAG laser is demonstrated by using monocrystalline silicon and ultra short pulses with pulse width of 28 ps and energy of 3 μJ approximately are obtained. The mechanism of the mode locking is analysed.
华仁忠, 钱列加, 邓锡铭. 用单晶硅在Nd:YAG激光器中实现被动锁模[J]. 光学学报, 1997, 17(8): 1083. 华仁忠, 钱列加, 邓锡铭. Passive Mode-Llocking of Nd:YAG Laser by Monocrystalline Silicon[J]. Acta Optica Sinica, 1997, 17(8): 1083.
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