分别利用金属脉冲磁过滤真空阴极弧沉积法(FCVA)、 直流磁控溅射法(SP)和脉冲辉光放电等离子体化学气相沉积法(PECVD)在硅片上沉积类金刚石膜层。 并利用激光拉曼光谱法(Raman spectroscopy)和X射线光电子能谱法(XPS)对类金刚石膜层进行研究。 通过研究分析发现, 不同方法制备的类金刚石膜层的G峰位、 D峰位、 T峰位、 半高宽、 I(D)/I(G)值、 I(T)/I(G)值和sp3键含量各不相同。 其中, 金属脉冲磁过滤真空阴极弧沉积法制备的类金刚石膜层的G峰位波数最大、 I(D)/I(G)和半高宽最小、 I(T)/I(G)最大、 sp3键含量最高； 直流磁控溅射法制备的类金刚石膜层的G峰位波数、 I(D)/I(G)、 I(T)/I(G) 和sp3键含量处于三者之间, G峰的半高宽是最大的； 脉冲辉光放电等离子体化学气相沉积法制备的类金刚石膜层的G峰位波数sp3键含量最小、 I(D)/I(G)最大、 I(T)/I(G)最小。

Diamond-like carbon(DLC) films were deposited on a silicon chip substrate by a metal pulsed magnetic filtered cathodic vacuum arc deposition technique, a direct current magnetron sputtering technique and a pulsed glow discharge plasma enhanced chemical vapor deposition technique. And the characteristics of DLC films were investigated using laser Raman spectroscopy and X-ray photoelectron spectroscopy. The spectra of diamond like carbon were collected using Raman spectrometers with 325 nm flters. It was found that DLC films prepared by various deposition technique have different G-peak, D-peak, T-peak, the full width at half maximum(FWHM)of G-peak, D-peak and T-peak, the intensity ratio I(D)/I(G) and I(T)/I(G) and the sp3 content. Among them, the films grown by metal pulsed magnetic filtered cathodic vacuum arc deposition technique have the largest G-peak wave number and the intensity ratio I(T)/I(G), the minimum of the intensity ratio I(D)/I(G), G-FWHM and the maximum sp3 content； those grown by the direct current magnetron sputtering technique have the 2nd largest G-peak wave number, the intensity ratio I(D)/I(G) and I(T)/I(G) and sp3 content, however, they have the largest G-FWHM, while those grown by the pulsed glow discharge plasma enhanced chemical vapor deposition technique have the minimum G-peak wave number and the intensity ratio I(T)/I(G) and sp3 content, and the maximum intensity ratio I(D)/I(G).