中国激光, 1997, 24 (5): 397, 网络出版: 2006-10-31
SBT铁电薄膜及其脉冲准分子激光制备
SBT Ferroelectric Thin Films Prepared by Pulsed Excimer Laser Deposition
摘要
采用脉冲准分子激光沉积法在Pt/Ti/SiO2/Si衬底上成功地制备了SBT铁电薄膜,发现存在一个最佳沉积衬底温度约为450 ℃。在该温度下沉积的SBT薄膜具有较饱和的方形电滞回线,其剩余极化Pr和矫顽电场Ec分别为8.4 μC/cm2和57 kV/cm。
Abstract
The perovskite like SrBi 2Ta 2O 9 thin films have been successfully prepared on Si/SiO 2/Ti/Pt substrate by pulsed eximer laser deposition. The crystallization and ferroelectric property were clearly dependent on the substrate temperature. The SrBi 2Ta 2O 9 thin film with fine grain size and well saturated square hysteresis loop was obtained at 450℃ substrate temperature. Good ferroelectric properties were obtained from the SBT film; Pr and Ec were 8.4 μC/cm 2 and 57 kV/cm, respectively.
杨平雄, 郑立荣, 王连卫, 林成鲁, 周宁生, 陆怀先. SBT铁电薄膜及其脉冲准分子激光制备[J]. 中国激光, 1997, 24(5): 397. 杨平雄, 郑立荣, 王连卫, 林成鲁, 周宁生, 陆怀先. SBT Ferroelectric Thin Films Prepared by Pulsed Excimer Laser Deposition[J]. Chinese Journal of Lasers, 1997, 24(5): 397.
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